Zhurnal Vychislitel'noi Matematiki i Matematicheskoi Fiziki
RUS  ENG    JOURNALS   PEOPLE   ORGANISATIONS   CONFERENCES   SEMINARS   VIDEO LIBRARY   PACKAGE AMSBIB  
General information
Latest issue
Archive
Impact factor

Search papers
Search references

RSS
Latest issue
Current issues
Archive issues
What is RSS


Zh. Vychisl. Mat. Mat. Fiz.:
Year:
Volume:
Issue:
Page:
Find




Personal entry:
Login:
Password:
Save password
Enter
Forgotten password?
Register

Zhurnal Vychislitel'noi Matematiki i Matematicheskoi Fiziki, 2013, Volume 53, Number 6, Pages 979–1003
DOI: https://doi.org/10.7868/S0044466913060033 (Mi zvmmf9845) 		 
This article is cited in 2 scientific papers (total in 2 papers)

On an algorithm for finding the electric potential distribution in the DG-MOSFET transistor

A. M. Blokhinab, B. V. Semisalovc

a Sobolev Institute of Mathematics, Siberian Branch of the Russian Academy of Sciences, Novosibirsk
b Novosibirsk State University
c Design-Technological Institute of Computer Equipment
Full-text PDF (517 kB) Citations (2)
References:
PDF
HTML
DOI: https://doi.org/10.7868/S0044466913060033
Abstract: An efficient numerical algorithm for finding the electric potential distribution in the DG-MOSFET transistor is proposed and discussed in detail. The class of hydrodynamic models describing the charge transport in semiconductors includes the Poisson equation for the electric potential. Since the equations of hydrodynamic models are nonlinear and involve small parameters and specific conditions on the boundary of the DG-MOSFET transistor domain, the numerical solution of the Poisson equation meets significant difficulties. An original algorithm is proposed that is based on the stabilization method and the idea of schemes without saturation and helps to cope with these difficulties.
Key words: hydrodynamic model, DG-MOSFET transistor, stabilization method, nonstationary regularization, algorithms without saturation, interpolation polynomial, spline function, matrix sweep method.
Received: 23.01.2013
English version:
Computational Mathematics and Mathematical Physics, 2013, Volume 53, Issue 6, Pages 798–822
DOI: https://doi.org/10.1134/S0965542513060031
Bibliographic databases:
Document Type: Article
UDC: 519.634
Language: Russian
Citation: A. M. Blokhin, B. V. Semisalov, “On an algorithm for finding the electric potential distribution in the DG-MOSFET transistor”, Zh. Vychisl. Mat. Mat. Fiz., 53:6 (2013), 979–1003; Comput. Math. Math. Phys., 53:6 (2013), 798–822
Citation in format AMSBIB
\Bibitem{BloSem13}
\by A.~M.~Blokhin, B.~V.~Semisalov
\paper On an algorithm for finding the electric potential distribution in the DG-MOSFET transistor
\jour Zh. Vychisl. Mat. Mat. Fiz.
\yr 2013
\vol 53
\issue 6
\pages 979--1003
\mathnet{http://mi.mathnet.ru/zvmmf9845}
\crossref{https://doi.org/10.7868/S0044466913060033}
\mathscinet{http://mathscinet.ams.org/mathscinet-getitem?mr=3252914}
\elib{https://elibrary.ru/item.asp?id=19086240}
\transl
\jour Comput. Math. Math. Phys.
\yr 2013
\vol 53
\issue 6
\pages 798--822
\crossref{https://doi.org/10.1134/S0965542513060031}
\isi{https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=Publons&SrcAuth=Publons_CEL&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=000321070700012}
\elib{https://elibrary.ru/item.asp?id=20438647}
\scopus{https://www.scopus.com/record/display.url?origin=inward&eid=2-s2.0-84879720682}
Linking options:
  • https://www.mathnet.ru/eng/zvmmf9845
  • https://www.mathnet.ru/eng/zvmmf/v53/i6/p979
    • This publication is cited in the following 2 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    		Журнал вычислительной математики и математической физики Computational Mathematics and Mathematical Physics
    Statistics & downloads:
    Abstract page:293
    Full-text PDF :83
    References:51
    First page:17
     
      Contact us:
    		  Terms of Use  Registration to the website  Logotypes © Steklov Mathematical Institute RAS, 2024