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Zhurnal Vychislitel'noi Matematiki i Matematicheskoi Fiziki, 2009, Volume 49, Number 12, Pages 2247–2254 (Mi zvmmf4803)  
This article is cited in 3 scientific papers (total in 3 papers)

Numerical simulation of the process of formation of shock waves in electron gas in a field-effect transistor

S. A. Kozlova, A. M. Oparina, V. M. Chechetkinb

a Institute of Automated Design, Russian Academy of Sciences, Vtoraya Brestskaya ul. 18/2, Moscow, 123056, Russia
b Keldysh Insititute of Applied Mathematics, Russian Academy of Sciences, Miusskaya pl. 4, Moscow, 125047, Russia
Full-text PDF (761 kB) Citations (3)
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Abstract: The formation of shock waves in the electron gas of a field-effect transistor is simulated taking into account the coupled hydrodynamic and electromagnetic processes approximated, respectively, by the shallow water equations and electrostatic potential equations.
Key words: field-effect transistor, electron gas, Belkotserkovskii–Gushchin–Kon'shin numerical scheme, numerical solution of Poisson's equation.
Received: 21.01.2009
English version:
Computational Mathematics and Mathematical Physics, 2009, Volume 49, Issue 12, Pages 2149–2157
DOI: https://doi.org/10.1134/S0965542509120136
Bibliographic databases:
Document Type: Article
UDC: 519.634
Language: Russian
Citation: S. A. Kozlov, A. M. Oparin, V. M. Chechetkin, “Numerical simulation of the process of formation of shock waves in electron gas in a field-effect transistor”, Zh. Vychisl. Mat. Mat. Fiz., 49:12 (2009), 2247–2254; Comput. Math. Math. Phys., 49:12 (2009), 2149–2157
Citation in format AMSBIB
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\paper Numerical simulation of the process of formation of shock waves in electron gas in a~field-effect transistor
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    • This publication is cited in the following 3 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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