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Vestnik SamGU. Estestvenno-Nauchnaya Ser., 2013, Issue 3(104), Pages 107–119 (Mi vsgu333)  
Physics

Mechanisms of degradation of electrophysical characteristics of mos-structures with high-$k$ dielectrics

M. B. Shalimovaa, V. S. Afanaskova, E. N. Khavdeyb

a Samara State University, Samara, 443011, Russian Federation
b P. N. Lebedev Physical Institute, Samara, 443011, Russian Federation
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Abstract: Results of study of the processes of change of electrophysical characteristics are presented at various operating modes of МОS-structures and the analysis of the most probable mechanisms of degradation of structures was spent. The gate dielectric was made from rare-earth oxides (high-$k$ dielectrics). The estimation of influence of electric field and temperature on change of a charge of investigated structures was spent, the value of energetically density of states on the interface dielectric — semiconductor was defined.
Keywords: MOS capacitors, reliability, oxide breakdown; gate dielectric; oxides of other rare earth elements.
Received: 02.03.2013
Revised: 02.03.2013
Document Type: Article
UDC: 621.382.2
Language: Russian
Citation: M. B. Shalimova, V. S. Afanaskov, E. N. Khavdey, “Mechanisms of degradation of electrophysical characteristics of mos-structures with high-$k$ dielectrics”, Vestnik Samarskogo Gosudarstvennogo Universiteta. Estestvenno-Nauchnaya Seriya, 2013, no. 3(104), 107–119
Citation in format AMSBIB
\Bibitem{ShaAfaKha13}
\by M.~B.~Shalimova, V.~S.~Afanaskov, E.~N.~Khavdey
\paper Mechanisms of degradation of electrophysical characteristics of mos-structures with high-$k$ dielectrics
\jour Vestnik Samarskogo Gosudarstvennogo Universiteta. Estestvenno-Nauchnaya Seriya
\yr 2013
\issue 3(104)
\pages 107--119
\mathnet{http://mi.mathnet.ru/vsgu333}
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