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Numerical methods and programming, 2001, Volume 2, Issue 1, Pages 12–26
(Mi vmp764)
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This article is cited in 1 scientific paper (total in 1 paper)
Numerical modeling and computer algorithm for the process of segregation of alloy impurities at the boundary of an
oxidation wave in semiconductor substrates
G. A. Tarnavskiia, S. I. Shpaka, M. S. Obrechtb a Khristianovich Institute of Theoretical and Applied Mechanics, Siberian Branch of the Russian Academy of Sciences, Novosibirsk
b University of Waterloo, Canada
Abstract:
An approach to the approximate
modeling of complex physico-chemical processes of segregation of alloy
impurities implanted in a base material is considered for the case when an
oxidation wave propagates along it. A computer algorithm that realizes
this approach is given. Numerical results obtained for the segregation of
boron, arsenic, phosphorus, and antimony in silicon at the boundary
“silicon/silicon dioxide” are discussed.
Keywords:
processes of segregation, oxidation waves, alloy impurities, numerical simulation, physico-chemical processes.
Citation:
G. A. Tarnavskii, S. I. Shpak, M. S. Obrecht, “Numerical modeling and computer algorithm for the process of segregation of alloy impurities at the boundary of an
oxidation wave in semiconductor substrates”, Num. Meth. Prog., 2:1 (2001), 12–26
Linking options:
https://www.mathnet.ru/eng/vmp764 https://www.mathnet.ru/eng/vmp/v2/i1/p12
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Abstract page: | 94 | Full-text PDF : | 50 |
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