Numerical methods and programming
RUS  ENG    JOURNALS   PEOPLE   ORGANISATIONS   CONFERENCES   SEMINARS   VIDEO LIBRARY   PACKAGE AMSBIB  
General information
Latest issue
Archive

Search papers
Search references

RSS
Latest issue
Current issues
Archive issues
What is RSS


Num. Meth. Prog.:
Year:
Volume:
Issue:
Page:
Find




Personal entry:
Login:
Password:
Save password
Enter
Forgotten password?
Register

Numerical methods and programming, 2010, Volume 11, Issue 3, Pages 210–214 (Mi vmp312)  
Вычислительные методы и приложения

A special doping regime in silicon wafer nanocolumns

G. A. Tarnavskii

Institute of Computational Mathematics and Mathematical Geophysics (Computing Center), Siberian Branch of the Russian Academy of Sciences, Novosibirsk
Full-text PDF (537 kB)
Abstract: Computer simulation for the ion implantation of impurities into silicon plate surface nanocolumns is conducted when the ion stream line is parallel to the plate base.
Keywords: computer simulation; doping in silicon; implantation; donor and acceptor impurities.
Document Type: Article
UDC: 519.2:541.1
Language: Russian
Citation: G. A. Tarnavskii, “A special doping regime in silicon wafer nanocolumns”, Num. Meth. Prog., 11:3 (2010), 210–214
Citation in format AMSBIB
\Bibitem{Tar10}
\by G.~A.~Tarnavskii
\paper A special doping regime in silicon wafer nanocolumns
\jour Num. Meth. Prog.
\yr 2010
\vol 11
\issue 3
\pages 210--214
\mathnet{http://mi.mathnet.ru/vmp312}
Linking options:
  • https://www.mathnet.ru/eng/vmp312
  • https://www.mathnet.ru/eng/vmp/v11/i3/p210
    • Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    		Numerical methods and programming
    Statistics & downloads:
    Abstract page:85
    Full-text PDF :108
     
      Contact us:
    		  Terms of Use  Registration to the website  Logotypes © Steklov Mathematical Institute RAS, 2024