Numerical study of stability for weighted finite difference schemes in transient process simulation in diode power semiconductor structures

Stability of weighted finite difference schemes used to simulate the drift diffusion thermal transient processes in diode power semiconductor structures is studied with consideration of parasitic and load elements. It is shown that the finite difference scheme for the continuity equation might be unstable with an oscillating behavior of the solution in a wide range of the time step for the weight values between 0.5 and 0.7.