Uchenye Zapiski Kazanskogo Universiteta. Seriya Fiziko-Matematicheskie Nauki
RUS  ENG    JOURNALS   PEOPLE   ORGANISATIONS   CONFERENCES   SEMINARS   VIDEO LIBRARY   PACKAGE AMSBIB  
General information
Latest issue
Archive
Impact factor

Search papers
Search references

RSS
Latest issue
Current issues
Archive issues
What is RSS



Uchenye Zapiski Kazanskogo Universiteta. Seriya Fiziko-Matematicheskie Nauki:
Year:
Volume:
Issue:
Page:
Find






Personal entry:
Login:
Password:
Save password
Enter
Forgotten password?
Register


Uchenye Zapiski Kazanskogo Universiteta. Seriya Fiziko-Matematicheskie Nauki, 2012, Volume 154, Book 3, Pages 11–25 (Mi uzku1134)  

On the Nature of Ferromagnetism in Oxide Semiconductors Doped with 3D Elements

A. A. Achkeeva, I. R. Vakhitova, R. I. Khaibullinb

a Institute of Physics, Kazan (Volga region) Federal University
b Zavoisky Physical Technical Institute, Kazan Scientific Center of the Russian Academy of Sciences
References:
Abstract: The origin and mechanisms of ferromagnetism in the new class of magnetic materials, oxide-diluted magnetic semiconductors (O-DMS), are examined in the framework of the Stoner–Anderson model. Within the Green function formalism, a condition (the Stoner criterion) for nucleation of ferromagnetism is obtained for itinerant electrons in the narrow defect (vacancy) band, and an additional contribution caused by the interaction with 3d magnetic ions is derived. The “trigger” character of the transition to the ferromagnetic state in O-DMS is discussed in its dependence on the type and concentration of 3d magnetic impurity dopant. The results of the calculations are compared with the experimental data for the spontaneous magnetic moment in semiconducting titanium dioxide (TiO$_2$) doped with 3d magnetic ions and containing various concentrations of oxygen vacancies.
Keywords: oxide-diluted magnetic semiconductors, ferromagnetism, oxygen vacancies, narrow defect bands, Stoner criterion.
Received: 28.06.2012
Document Type: Article
UDC: 537.6
Language: Russian
Citation: A. A. Achkeev, I. R. Vakhitov, R. I. Khaibullin, “On the Nature of Ferromagnetism in Oxide Semiconductors Doped with 3D Elements”, Uchenye Zapiski Kazanskogo Universiteta. Seriya Fiziko-Matematicheskie Nauki, 154, no. 3, Kazan University, Kazan, 2012, 11–25
Citation in format AMSBIB
\Bibitem{AchVakKha12}
\by A.~A.~Achkeev, I.~R.~Vakhitov, R.~I.~Khaibullin
\paper On the Nature of Ferromagnetism in Oxide Semiconductors Doped with 3D Elements
\serial Uchenye Zapiski Kazanskogo Universiteta. Seriya Fiziko-Matematicheskie Nauki
\yr 2012
\vol 154
\issue 3
\pages 11--25
\publ Kazan University
\publaddr Kazan
\mathnet{http://mi.mathnet.ru/uzku1134}
Linking options:
  • https://www.mathnet.ru/eng/uzku1134
  • https://www.mathnet.ru/eng/uzku/v154/i3/p11
  • Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    Uchenye Zapiski Kazanskogo Universiteta. Seriya Fiziko-Matematicheskie Nauki
     
      Contact us:
     Terms of Use  Registration to the website  Logotypes © Steklov Mathematical Institute RAS, 2024