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Proceedings of the Yerevan State University, series Physical and Mathematical Sciences, 1988, Issue 3, Pages 83–86 (Mi uzeru919)  
Physics

High frequency limit of MOM diodes

Yu. A. Avetisyan, H. H. Barseghian, A. O. Makaryan

Faculty of Physics, Yerevan State University
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Abstract: In the present paper the MOM diode behaviour has been investigated for frequencies much higher than electron collision characterizing frequency in whisker. It has been shown that the reactive part of the whisker impedance is of inductive character, the influence of that inductivity and tunnelling transition shunting capacitance on the properties of MOM diode has been investigated.
Received: 17.02.1988
Accepted: 14.09.1988
Document Type: Article
UDC: 621.385.2.012
Language: Russian
Citation: Yu. A. Avetisyan, H. H. Barseghian, A. O. Makaryan, “High frequency limit of MOM diodes”, Proceedings of the YSU, Physical and Mathematical Sciences, 1988, no. 3, 83–86
Citation in format AMSBIB
\Bibitem{AveBarMak88}
\by Yu.~A.~Avetisyan, H.~H.~Barseghian, A.~O.~Makaryan
\paper High frequency limit of MOM diodes
\jour Proceedings of the YSU, Physical and Mathematical Sciences
\yr 1988
\issue 3
\pages 83--86
\mathnet{http://mi.mathnet.ru/uzeru919}
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