Influence of optical phonon confinement on two-phonon capture processes in quantum dots

Electron capture process in $\mathrm{GaAs/AlAs}$ spherical quantum dot-quantum well structure is studied theoretically. The capture rate in two polar-optical-phononmediated capture processes has been calculated by taking into account the phonon confinement effect. Carrier capture is shown to proceed with rates as high as $10^{10} s^{–1}$at temperature $T>100~K$. A short capture time is also achieved for low carrier density