Thermal capture of electrons by dislocation kinks in semiconductors

In the light of recombination-enhanced motion of dislocations in semiconductors, we explored the process of thermal capture of an electron by a smooth kink on dislocation. Multi-phonon capture becomes possible due to carrier localisation on the kink. With the use of wave function of localized state we have found the multi-phonon capture cross-section for two limiting temperature cases corresponding to the thermally activated and quantum transition between vibronic terms.