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Proceedings of the Yerevan State University, series Physical and Mathematical Sciences, 2011, Issue 3, Pages 58–61 (Mi uzeru194)  
Physics

Plasmonic mode confinement in InAs-SiO$_2$-Si waveguide in Terahertz region

H. S. Hakobyan

Chair of Microwave Radiophysics and Telecommunication, YSU
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Abstract: The dispersion relation of a novel semiconductor-gap-dielectric waveguide in terahertz range are investigated. It is shown that InAs-SiO$_2$-Si structure supports strongly confined guided mode with а sizes $0.0016 \lambda\times 0.02\lambda$ at $1$ THz.
Keywords: terahertz, waveguides, surface plasmons.
Received: 13.12.2010
Accepted: 15.02.2011
Document Type: Article
Language: English
Citation: H. S. Hakobyan, “Plasmonic mode confinement in InAs-SiO$_2$-Si waveguide in Terahertz region”, Proceedings of the YSU, Physical and Mathematical Sciences, 2011, no. 3, 58–61
Citation in format AMSBIB
\Bibitem{Hak11}
\by H.~S.~Hakobyan
\paper Plasmonic mode confinement in InAs-SiO$_2$-Si waveguide in Terahertz region
\jour Proceedings of the YSU, Physical and Mathematical Sciences
\yr 2011
\issue 3
\pages 58--61
\mathnet{http://mi.mathnet.ru/uzeru194}
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