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This article is cited in 15 scientific papers (total in 15 papers)
INSTRUMENTS AND METHODS OF INVESTIGATION
Possibilities and limitations of ion implantation in diamond, and comparison with other doping methods
V. S. Vavilov P. N. Lebedev Physical Institute, Russian Academy of Sciences, Moscow
Abstract:
Diamond is a crystal with extremely strong atomic bonds. It is characterised by very low equilibrium parameters of the solubility and diffusion coefficients of impurities. Ion implantation therefore represents a natural alternative doping method. The published experimental results show that p-type and p+-type layers can be formed by boron ion implantation. Implantation of Li+ and C+ produces n-type layers. Diamond films grown in the presence of phosphorus and sodium can also be electrically conducting. The efficiency of this method of introducing electrically active centres varies strongly with the temperature of diamond during implantation and with the conditions during the subsequent annealing.
Received: December 31, 1994
Citation:
V. S. Vavilov, “Possibilities and limitations of ion implantation in diamond, and comparison with other doping methods”, UFN, 164:4 (1994), 429–433; Phys. Usp., 37:4 (1994), 407–411
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https://www.mathnet.ru/eng/ufn962 https://www.mathnet.ru/eng/ufn/v164/i4/p429
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Abstract page: | 140 | Full-text PDF : | 55 | First page: | 1 |
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