Uspekhi Fizicheskikh Nauk
RUS  ENG    JOURNALS   PEOPLE   ORGANISATIONS   CONFERENCES   SEMINARS   VIDEO LIBRARY   PACKAGE AMSBIB  
General information
Latest issue
Forthcoming papers
Archive
Impact factor
Guidelines for authors
Submit a manuscript

Search papers
Search references

RSS
Latest issue
Current issues
Archive issues
What is RSS



UFN:
Year:
Volume:
Issue:
Page:
Find






Personal entry:
Login:
Password:
Save password
Enter
Forgotten password?
Register


Uspekhi Fizicheskikh Nauk, 1994, Volume 164, Number 2, Pages 195–229
DOI: https://doi.org/10.3367/UFNr.0164.199402c.0195
(Mi ufn938)
 

This article is cited in 10 scientific papers (total in 10 papers)

REVIEWS OF TOPICAL PROBLEMS

Amorphous semiconductors prepared by quenching under high pressure

S. V. Demisheva, Yu. V. Kosichkina, N. E. Sluchankoa, A. G. Lyapinb

a Prokhorov General Physics Institute of the Russian Academy of Sciences, Moscow
b Institute for High Pressure Physics, Russian Academy of Sciences
Abstract: Amorphous semiconductors synthesised by high-pressure quenching (ASHP) are discussed as a new class of materials of potential value in explaning the mechanisms of solid-state amorphisation processes and in testing models of an effective medium and of the scaling theory and the percolation theory. The formation of multicomponent systems, the superconductivity induced by amorphisation, the stability regions of metastable phases, and the effect of doping on the physical properties of tetrahedral amorphous semiconductors have been studied by using a wide range of experimental methods capable of establishing the interrelationship and the sequence of the phase transformations in ASHP produced by changes in the physical parameters. The bibliography contains 104 references.
Received: January 1, 1994
English version:
Physics–Uspekhi, 1994, Volume 37, Issue 2, Pages 185–217
DOI: https://doi.org/10.1070/PU1994v037n02ABEH000008
Bibliographic databases:
Document Type: Article
PACS: 72.80.N
Language: Russian


Citation: S. V. Demishev, Yu. V. Kosichkin, N. E. Sluchanko, A. G. Lyapin, “Amorphous semiconductors prepared by quenching under high pressure”, UFN, 164:2 (1994), 195–229; Phys. Usp., 37:2 (1994), 185–217
Linking options:
  • https://www.mathnet.ru/eng/ufn938
  • https://www.mathnet.ru/eng/ufn/v164/i2/p195
  • This publication is cited in the following 10 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    Успехи физических наук Physics-Uspekhi
     
      Contact us:
     Terms of Use  Registration to the website  Logotypes © Steklov Mathematical Institute RAS, 2024