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Uspekhi Fizicheskikh Nauk, 1981, Volume 134, Number 4, Pages 748–750
DOI: https://doi.org/10.3367/UFNr.0134.198108l.0748
(Mi ufn9044)
 

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Self-stabilized avalanche process in a metal-dielectric-semiconductor (MDS) structure. Avalanche MDS photodetectors

N. G. Basov, A. B. Kravchenko, A. F. Plotnikov, V. È. Shubin
English version:
Physics–Uspekhi, 1981, Volume 24, Issue 8, Pages 728–729
DOI: https://doi.org/10.1070/PU1981v024n08ABEH004855
Document Type: Article
UDC: 537.311.33(048)
PACS: 01.10.Fv
Language: Russian
Citation: N. G. Basov, A. B. Kravchenko, A. F. Plotnikov, V. È. Shubin, “Self-stabilized avalanche process in a metal-dielectric-semiconductor (MDS) structure. Avalanche MDS photodetectors”, UFN, 134:4 (1981), 748–750; Phys. Usp., 24:8 (1981), 728–729
Citation in format AMSBIB
\Bibitem{BasKraPlo81}
\by N.~G.~Basov, A.~B.~Kravchenko, A.~F.~Plotnikov, V.~\`E.~Shubin
\paper Self-stabilized avalanche process in a metal-dielectric-semiconductor (MDS) structure. Avalanche MDS photodetectors
\jour UFN
\yr 1981
\vol 134
\issue 4
\pages 748--750
\mathnet{http://mi.mathnet.ru/ufn9044}
\crossref{https://doi.org/10.3367/UFNr.0134.198108l.0748}
\transl
\jour Phys. Usp.
\yr 1981
\vol 24
\issue 8
\pages 728--729
\crossref{https://doi.org/10.1070/PU1981v024n08ABEH004855}
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  • https://www.mathnet.ru/eng/ufn/v134/i4/p748
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