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Uspekhi Fizicheskikh Nauk, 1981, Volume 134, Number 4, Pages 747–748
DOI: https://doi.org/10.3367/UFNr.0134.198108k.0747 (Mi ufn9043) 		 
MEETINGS AND CONFERENCES

Electronic processes in metal-silicon nitride-silicon dioxide-semiconductor (MNOS) structures

N. G. Basov, A. F. Plotnikov, V. N. Seleznev
Full-text PDF (209 kB)
DOI: https://doi.org/10.3367/UFNr.0134.198108k.0747
English version:
Physics–Uspekhi, 1981, Volume 24, Issue 8, Pages 727–728
DOI: https://doi.org/10.1070/PU1981v024n08ABEH004853
Document Type: Article
UDC: 537.311.33
PACS: 01.10.Fv
Language: Russian
Citation: N. G. Basov, A. F. Plotnikov, V. N. Seleznev, “Electronic processes in metal-silicon nitride-silicon dioxide-semiconductor (MNOS) structures”, UFN, 134:4 (1981), 747–748; Phys. Usp., 24:8 (1981), 727–728
Citation in format AMSBIB
\Bibitem{BasPloSel81}
\by N.~G.~Basov, A.~F.~Plotnikov, V.~N.~Seleznev
\paper Electronic processes in metal-silicon nitride-silicon dioxide-semiconductor (MNOS) structures
\jour UFN
\yr 1981
\vol 134
\issue 4
\pages 747--748
\mathnet{http://mi.mathnet.ru/ufn9043}
\crossref{https://doi.org/10.3367/UFNr.0134.198108k.0747}
\transl
\jour Phys. Usp.
\yr 1981
\vol 24
\issue 8
\pages 727--728
\crossref{https://doi.org/10.1070/PU1981v024n08ABEH004853}
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