Uspekhi Fizicheskikh Nauk
RUS  ENG    JOURNALS   PEOPLE   ORGANISATIONS   CONFERENCES   SEMINARS   VIDEO LIBRARY   PACKAGE AMSBIB  
General information
Latest issue
Forthcoming papers
Archive
Impact factor
Guidelines for authors
Submit a manuscript

Search papers
Search references

RSS
Latest issue
Current issues
Archive issues
What is RSS


UFN:
Year:
Volume:
Issue:
Page:
Find




Personal entry:
Login:
Password:
Save password
Enter
Forgotten password?
Register

Uspekhi Fizicheskikh Nauk, 1983, Volume 139, Number 2, Pages 347–355
DOI: https://doi.org/10.3367/UFNr.0139.198302f.0347 (Mi ufn8600) 		 
This article is cited in 9 scientific papers (total in 9 papers)

FROM THE CURRENT LITERATURE

Trap trajectories and the cutoff of dissipative effects in semiconductors

J. B. Levinson
Full-text PDF (581 kB) Citations (9)
DOI: https://doi.org/10.3367/UFNr.0139.198302f.0347
English version:
Physics–Uspekhi, 1983, Volume 26, Issue 2, Pages 176–181
DOI: https://doi.org/10.1070/PU1983v026n02ABEH004324
Document Type: Article
UDC: 537.311.33
PACS: 72.20.Jv, 72.20.My, 72.20.Dp
Language: Russian
Citation: J. B. Levinson, “Trap trajectories and the cutoff of dissipative effects in semiconductors”, UFN, 139:2 (1983), 347–355; Phys. Usp., 26:2 (1983), 176–181
Citation in format AMSBIB
\Bibitem{Lev83}
\by J.~B.~Levinson
\paper Trap trajectories and the cutoff of dissipative effects in semiconductors
\jour UFN
\yr 1983
\vol 139
\issue 2
\pages 347--355
\mathnet{http://mi.mathnet.ru/ufn8600}
\crossref{https://doi.org/10.3367/UFNr.0139.198302f.0347}
\transl
\jour Phys. Usp.
\yr 1983
\vol 26
\issue 2
\pages 176--181
\crossref{https://doi.org/10.1070/PU1983v026n02ABEH004324}
Linking options:
  • https://www.mathnet.ru/eng/ufn8600
  • https://www.mathnet.ru/eng/ufn/v139/i2/p347
    • This publication is cited in the following 9 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    		Успехи физических наук Physics-Uspekhi
    Statistics & downloads:
    Abstract page:52
    Full-text PDF :28
     
      Contact us:
    		  Terms of Use  Registration to the website  Logotypes © Steklov Mathematical Institute RAS, 2024