Uspekhi Fizicheskikh Nauk
RUS  ENG    JOURNALS   PEOPLE   ORGANISATIONS   CONFERENCES   SEMINARS   VIDEO LIBRARY   PACKAGE AMSBIB  
General information
Latest issue
Forthcoming papers
Archive
Impact factor
Guidelines for authors
Submit a manuscript

Search papers
Search references

RSS
Latest issue
Current issues
Archive issues
What is RSS



UFN:
Year:
Volume:
Issue:
Page:
Find






Personal entry:
Login:
Password:
Save password
Enter
Forgotten password?
Register


Uspekhi Fizicheskikh Nauk, 1985, Volume 147, Number 3, Pages 523–558
DOI: https://doi.org/10.3367/UFNr.0147.198511d.0523
(Mi ufn8396)
 

This article is cited in 57 scientific papers (total in 57 papers)

REVIEWS OF TOPICAL PROBLEMS

Defect formation in solids by decay of electronic excitations

M. I. Klingera, Ch. B. Lushchikb, T. V. Mashovetsa, G. A. Kholodarc, M. K. Sheĭnkmand, M. A. Élangob

a Ioffe Physico-Technical Institute USSR Academy of Sciences, Leningrad
b Institute of Physics of the Academy of Sciences of the Èstonian SSR
c National Taras Shevchenko University of Kyiv
d Institute of Semiconductor Physics, Kiev
Abstract: We consider a new type of nonradiative transitions in nonmetallic solids. The transitions are not accompanied by heat release but by large (compared with interatomic distances) displacements of individual atoms. These instabilities (electrostatic, vibronic, structural), which lead to formation of defects in solid crystals and glasses, are classified. We describe defect-formation processes both in ionic crystals upon decay of self-trapping excitons, and in semiconductors following multiple ionization of atoms near pre-existing charged impurity centers. The mechanisms whereby complex defects are restructured in semiconductors when nonequilibrium current carriers are introduced and when electrons and holes recombine are discussed. The role of current carriers in thermal production of defects is considered. The mechanism of formation of peculiar defects in glassy semiconductors is discussed.
English version:
Physics–Uspekhi, 1985, Volume 28, Issue 11
DOI: https://doi.org/10.1070/PU1985v028n11ABEH003977
Document Type: Article
UDC: 538.95
PACS: 61.72.Cc, 71.35.Aa, 61.43.Dq, 61.82.Fk
Language: Russian
Citation: M. I. Klinger, Ch. B. Lushchik, T. V. Mashovets, G. A. Kholodar, M. K. Sheǐnkman, M. A. Élango, “Defect formation in solids by decay of electronic excitations”, UFN, 147:3 (1985), 523–558
Citation in format AMSBIB
\Bibitem{KliLusMas85}
\by M.~I.~Klinger, Ch.~B.~Lushchik, T.~V.~Mashovets, G.~A.~Kholodar, M.~K.~She{\v\i}nkman, M.~A.~\'Elango
\paper Defect formation in solids by decay of electronic excitations
\jour UFN
\yr 1985
\vol 147
\issue 3
\pages 523--558
\mathnet{http://mi.mathnet.ru/ufn8396}
\crossref{https://doi.org/10.3367/UFNr.0147.198511d.0523}
Linking options:
  • https://www.mathnet.ru/eng/ufn8396
  • https://www.mathnet.ru/eng/ufn/v147/i3/p523
  • This publication is cited in the following 57 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    Успехи физических наук Physics-Uspekhi
    Statistics & downloads:
    Abstract page:54
    Full-text PDF :24
     
      Contact us:
     Terms of Use  Registration to the website  Logotypes © Steklov Mathematical Institute RAS, 2024