Uspekhi Fizicheskikh Nauk
RUS  ENG    JOURNALS   PEOPLE   ORGANISATIONS   CONFERENCES   SEMINARS   VIDEO LIBRARY   PACKAGE AMSBIB  
General information
Latest issue
Forthcoming papers
Archive
Impact factor
Guidelines for authors
Submit a manuscript

Search papers
Search references

RSS
Latest issue
Current issues
Archive issues
What is RSS



UFN:
Year:
Volume:
Issue:
Page:
Find






Personal entry:
Login:
Password:
Save password
Enter
Forgotten password?
Register


Uspekhi Fizicheskikh Nauk, 1985, Volume 147, Number 3, Pages 485–521
DOI: https://doi.org/10.3367/UFNr.0147.198511c.0485
(Mi ufn8395)
 

This article is cited in 65 scientific papers (total in 65 papers)

REVIEWS OF TOPICAL PROBLEMS

Semiconductor superlattices

A. P. Silin

P. N. Lebedev Physical Institute, the USSR Academy of Sciences, Moscow
Abstract: The properties of semiconductor superlattices–solid-state structures in which there exists, in addition to the periodic potential of the crystal lattice, a one-dimensional potential whose period is much longer than the lattice constant—are studied. The existence of the superlattice potential substantially alters the energy spectrum, as a result of which superlattices have a number of interesting properties which ordinary semiconductors do not have. Superlattices offer a unique possibility for altering their band structure practically arbitrarily. The characteristic features of the luminescence of superlattices (tunability of the emitted wavelengths, the excitonic nature of the radiation up to room temperature, strong suppression of impurity trapping, femtosecond kinetics, etc.) are being exploited to develop a new generation of light-emitting devices. The acoustic properties of superlattices are characterized by the existence of selective reflection of phonons. Semiconductor superlattices are characterized by substantially nonlinear transport properties, owing to the presence of very narrow minibands in their energy spectrum.
English version:
Physics–Uspekhi, 1985, Volume 28, Issue 11, Pages 972–993
DOI: https://doi.org/10.1070/PU1985v028n11ABEH003967
Document Type: Article
UDC: 621.315.592
PACS: 73.21.Cd, 78.67.Pt, 62.65.+k, 68.65.Cd, 72.20.My, 78.60.-b
Language: Russian
Citation: A. P. Silin, “Semiconductor superlattices”, UFN, 147:3 (1985), 485–521; Phys. Usp., 28:11 (1985), 972–993
Citation in format AMSBIB
\Bibitem{Sil85}
\by A.~P.~Silin
\paper Semiconductor superlattices
\jour UFN
\yr 1985
\vol 147
\issue 3
\pages 485--521
\mathnet{http://mi.mathnet.ru/ufn8395}
\crossref{https://doi.org/10.3367/UFNr.0147.198511c.0485}
\transl
\jour Phys. Usp.
\yr 1985
\vol 28
\issue 11
\pages 972--993
\crossref{https://doi.org/10.1070/PU1985v028n11ABEH003967}
Linking options:
  • https://www.mathnet.ru/eng/ufn8395
  • https://www.mathnet.ru/eng/ufn/v147/i3/p485
  • This publication is cited in the following 65 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    Успехи физических наук Physics-Uspekhi
    Statistics & downloads:
    Abstract page:154
    Full-text PDF :87
     
      Contact us:
     Terms of Use  Registration to the website  Logotypes © Steklov Mathematical Institute RAS, 2024