Uspekhi Fizicheskikh Nauk
RUS  ENG    JOURNALS   PEOPLE   ORGANISATIONS   CONFERENCES   SEMINARS   VIDEO LIBRARY   PACKAGE AMSBIB  
General information
Latest issue
Forthcoming papers
Archive
Impact factor
Guidelines for authors
Submit a manuscript

Search papers
Search references

RSS
Latest issue
Current issues
Archive issues
What is RSS



UFN:
Year:
Volume:
Issue:
Page:
Find






Personal entry:
Login:
Password:
Save password
Enter
Forgotten password?
Register


Uspekhi Fizicheskikh Nauk, 1985, Volume 147, Number 1, Pages 3–47
DOI: https://doi.org/10.3367/UFNr.0147.198509a.0003
(Mi ufn8359)
 

This article is cited in 32 scientific papers (total in 32 papers)

REVIEWS OF TOPICAL PROBLEMS

Excitonic molecules in semiconductors

V. D. Kulakovskii, V. G. Lysenko, V. B. Timofeev

Institute of Solid State Physics of the Academy of Sciences SSSR, Chernogolovka, Moscow region
Abstract: Great progress has been made in recent years in experimental studies of excitonic molecules, both in direct-band and indirect-band semiconductors. The exciton systems in these semiconductors differ substantially. In direct-band semiconductors with dipole-allowed optical transitions, the direct-recombination times are extremely small. Consequently the processes of binding of excitons into excitonic molecules and their decay occur under strongly nonequilibrium conditions. Hence one can obtain the fundamental information on biexcitons in these semiconductors by nonlinear optical methods. This review discusses the processes on which the various methods are based: two-photon resonance excitation of biexcitons, induced one-photon conversion of an exciton into a biexciton, two-photon resonance Raman scattering involving biexciton states, etc., and their application to studying biexcitons with the example of CdS. Problems of bistability involving biexcitons are also briefly discussed. In indirect semiconductors, where recombination occurs with the emission of a phonon, the lifetimes of excitons are large, and quasiequilibrium can be established in the exciton system. Under these conditions the information on the properties of the molecules is obtained by analyzing their radiative-decay spectra. The problem of detecting biexcitons in indirect semiconductors, radiative decay of molecules, and the effect on their stability of external electric, strain, and magnetic fields are discussed in detail with the examples of Si and Ge. Also the results of investigating the quantum statistical behavior of a dense gas of spin-oriented excitons (in a magnetic field under conditions in which the biexcitons are destabilized) are briefly presented (using the example of uniaxially compressed germanium), and the question of the possibility of their Bose condensation is discussed.
English version:
Physics–Uspekhi, 1985, Volume 28, Issue 9, Pages 735–761
DOI: https://doi.org/10.1070/PU1985v028n09ABEH003990
Document Type: Article
UDC: 621.315.592
PACS: 71.35.-y, 78.30.Fs
Language: Russian
Citation: V. D. Kulakovskii, V. G. Lysenko, V. B. Timofeev, “Excitonic molecules in semiconductors”, UFN, 147:1 (1985), 3–47; Phys. Usp., 28:9 (1985), 735–761
Citation in format AMSBIB
\Bibitem{KulLysTim85}
\by V.~D.~Kulakovskii, V.~G.~Lysenko, V.~B.~Timofeev
\paper Excitonic molecules in semiconductors
\jour UFN
\yr 1985
\vol 147
\issue 1
\pages 3--47
\mathnet{http://mi.mathnet.ru/ufn8359}
\crossref{https://doi.org/10.3367/UFNr.0147.198509a.0003}
\transl
\jour Phys. Usp.
\yr 1985
\vol 28
\issue 9
\pages 735--761
\crossref{https://doi.org/10.1070/PU1985v028n09ABEH003990}
Linking options:
  • https://www.mathnet.ru/eng/ufn8359
  • https://www.mathnet.ru/eng/ufn/v147/i1/p3
  • This publication is cited in the following 32 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    Успехи физических наук Physics-Uspekhi
     
      Contact us:
     Terms of Use  Registration to the website  Logotypes © Steklov Mathematical Institute RAS, 2024