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DOI: https://doi.org/10.3367/UFNr.0146.198507h.0536

English version:
Physics–Uspekhi, 1985, Volume 28, Issue 7, Pages 635–636
DOI: https://doi.org/10.1070/PU1985v028n07ABEH003877

Citation: V. M. Pudalov, S. G. Semenchinskii, V. S. Edel'man, “Charge and potential of an inversion layer in a metalinsulator-semiconductor structure in a quantizing magnetic field”, UFN, 146:3 (1985), 536–538; Phys. Usp., 28:7 (1985), 635–636

Citation in format AMSBIB

Linking options:

https://www.mathnet.ru/eng/ufn8336

https://www.mathnet.ru/eng/ufn/v146/i3/p536

CONFERENCES AND SYMPOSIA

• Scientific session of the Division of General Physics and Astronomy and the Division of Nuclear Physics of the Academy of Sciences of the USSR (30–31 January 1985)
  UFN, 1985, 146:3, 531–543
• Spectrum of a 2D electron gas in an inversion layer
  Yu. A. Bychkov, E. I. Rashba
  UFN, 1985, 146:3, 531–534
• Galvanomagnetic properties of a 2D electron layer in silicon under conditions of a quantized Hall resistance
  V. M. Pudalov, S. G. Semenchinskii
  UFN, 1985, 146:3, 534–536
• Charge and potential of an inversion layer in a metalinsulator-semiconductor structure in a quantizing magnetic field
  V. M. Pudalov, S. G. Semenchinskii, V. S. Edel'man
  UFN, 1985, 146:3, 536–538
• Collapse and narrowing of spectra during condensation of gases
  A. I. Burshtein
  UFN, 1985, 146:3, 538–540
• Domain walls in magnetic materials according to NMR spectroscopy
  A. V. Zalesskii
  UFN, 1985, 146:3, 541–543

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