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This article is cited in 6 scientific papers (total in 6 papers)
PHYSICS OF OUR DAYS
Some physical aspects of ion implantation
V. S. Vavilov P. N. Lebedev Physical Institute, the USSR Academy of Sciences, Moscow
Abstract:
Ion implantation and related processes of deposition and sputtering. – The nonequilibrium and metastable nature of ion-implanted structures.
– Amorphous solids produced by ion implantation and planar structures that include them. – Recrystallization of layers doped or (and) amortised by ion implantation. – Analysis of the composition and properties of ion-implanted planar structures. – Method of analyzing spectra of photo- and cathodoluminescence of ion-implanted layers. – Optical methods for the study of near-surface layers of ion-implanted structures. – Capacitive spectroscopy of energy levels. – Limits of applicability of ion implantation as a method of controlling properties of semiconductors and other solids.
Citation:
V. S. Vavilov, “Some physical aspects of ion implantation”, UFN, 145:2 (1985), 329–346; Phys. Usp., 28:2 (1985), 196–206
Linking options:
https://www.mathnet.ru/eng/ufn8270 https://www.mathnet.ru/eng/ufn/v145/i2/p329
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Abstract page: | 34 | Full-text PDF : | 5 |
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