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Uspekhi Fizicheskikh Nauk, 1985, Volume 145, Number 2, Pages 329–346
DOI: https://doi.org/10.3367/UFNr.0145.198502e.0329
(Mi ufn8270)
 

This article is cited in 6 scientific papers (total in 6 papers)

PHYSICS OF OUR DAYS

Some physical aspects of ion implantation

V. S. Vavilov

P. N. Lebedev Physical Institute, the USSR Academy of Sciences, Moscow
Abstract: Ion implantation and related processes of deposition and sputtering. – The nonequilibrium and metastable nature of ion-implanted structures. – Amorphous solids produced by ion implantation and planar structures that include them. – Recrystallization of layers doped or (and) amortised by ion implantation. – Analysis of the composition and properties of ion-implanted planar structures. – Method of analyzing spectra of photo- and cathodoluminescence of ion-implanted layers. – Optical methods for the study of near-surface layers of ion-implanted structures. – Capacitive spectroscopy of energy levels. – Limits of applicability of ion implantation as a method of controlling properties of semiconductors and other solids.
English version:
Physics–Uspekhi, 1985, Volume 28, Issue 2, Pages 196–206
DOI: https://doi.org/10.1070/PU1985v028n02ABEH003854
Document Type: Article
UDC: 541.132
PACS: 81.15.Cd, 68.55.Ln, 68.55.Nq, 78.55.-m, 78.60.Hk, 78.66.Jg
Language: Russian
Citation: V. S. Vavilov, “Some physical aspects of ion implantation”, UFN, 145:2 (1985), 329–346; Phys. Usp., 28:2 (1985), 196–206
Citation in format AMSBIB
\Bibitem{Vav85}
\by V.~S.~Vavilov
\paper Some physical aspects of ion implantation
\jour UFN
\yr 1985
\vol 145
\issue 2
\pages 329--346
\mathnet{http://mi.mathnet.ru/ufn8270}
\crossref{https://doi.org/10.3367/UFNr.0145.198502e.0329}
\transl
\jour Phys. Usp.
\yr 1985
\vol 28
\issue 2
\pages 196--206
\crossref{https://doi.org/10.1070/PU1985v028n02ABEH003854}
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  • This publication is cited in the following 6 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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