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DOI: https://doi.org/10.3367/UFNr.0149.198606j.0339

English version:
Physics–Uspekhi, 1986, Volume 29, Issue 6, Pages 579–581
DOI: https://doi.org/10.1070/PU1986v029n06ABEH003428

Citation: B. A. Volkov, O. A. Pankratov, “Inverted contact in semiconductors–a new inhomogeneous structure with a twodimensional gas of zero-mass electrons”, UFN, 149:2 (1986), 339–342; Phys. Usp., 29:6 (1986), 579–581

Citation in format AMSBIB

Linking options:

https://www.mathnet.ru/eng/ufn8128

https://www.mathnet.ru/eng/ufn/v149/i2/p339

CONFERENCES AND SYMPOSIA

• Scientific Session of the Division of General Physics and Astronomy and the Division of Nuclear Physics of the Academy of Sciences of the USSR (27–28 November 1985)
  UFN, 1986, 149:2, 325–342
• General properties of systems with a “double” critical point
  A. A. Sobyanin
  UFN, 1986, 149:2, 325–328
• Experimental studies of solutions with a “double” critical point
  I. L. Fabelinskiĭ, S. V. Krivokhizha, L. L. Chaikov, A. A. Sobyanin
  UFN, 1986, 149:2, 328–331
• New results on the dynamics of Rochelle salt crystals (a system with a “double” critical point)
  A. A. Volkov, G. V. Kozlov, E. B. Kryukova, A. A. Sobyanin
  UFN, 1986, 149:2, 331–334
• Electronic structure of quasicubic crystals: energy bands, dielectric properties, and defects in narrow-gap semiconductors
  B. A. Volkov, O. A. Pankratov
  UFN, 1986, 149:2, 334–336
• The origin of electron spectra of group V semimetals
  L. A. Falkovsky
  UFN, 1986, 149:2, 336–339
• Inverted contact in semiconductors–a new inhomogeneous structure with a twodimensional gas of zero-mass electrons
  B. A. Volkov, O. A. Pankratov
  UFN, 1986, 149:2, 339–342

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