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Uspekhi Fizicheskikh Nauk, 1989, Volume 158, Number 4, Pages 581–604
DOI: https://doi.org/10.3367/UFNr.0158.198908b.0581
(Mi ufn7683)
 

This article is cited in 12 scientific papers (total in 12 papers)

REVIEWS OF TOPICAL PROBLEMS

Quasiamorphous semiconductors

O. A. Golikova

Ioffe Physico-Technical Institute USSR Academy of Sciences, Leningrad
Abstract: The experimental data on the electrical, thermal, and optical properties of high-boron compounds and modifications of boron–refractory crystals distinguished by specific and complicated structure–are reviewed. It is shown that depending on the complexity of the crystalline structure the properties of the materials transform, systematically approaching the properties characteristic of amorphous semiconductors; a new class of materials is thus identified–quasiamorphous semiconductors. In the limiting case of the most complicated structures, they can be regarded as natural structural models of amorphous semiconductors.
English version:
Physics–Uspekhi, 1989, Volume 32, Issue 8, Pages 665–677
DOI: https://doi.org/10.1070/PU1989v032n08ABEH002746
Document Type: Article
UDC: 621.315.592
PACS: 61.43.Dq, 72.80.Ng, 71.23.Cq
Language: Russian
Citation: O. A. Golikova, “Quasiamorphous semiconductors”, UFN, 158:4 (1989), 581–604; Phys. Usp., 32:8 (1989), 665–677
Citation in format AMSBIB
\Bibitem{Gol89}
\by O.~A.~Golikova
\paper Quasiamorphous semiconductors
\jour UFN
\yr 1989
\vol 158
\issue 4
\pages 581--604
\mathnet{http://mi.mathnet.ru/ufn7683}
\crossref{https://doi.org/10.3367/UFNr.0158.198908b.0581}
\transl
\jour Phys. Usp.
\yr 1989
\vol 32
\issue 8
\pages 665--677
\crossref{https://doi.org/10.1070/PU1989v032n08ABEH002746}
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  • This publication is cited in the following 12 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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