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Uspekhi Fizicheskikh Nauk, 1989, Volume 158, Number 2, Pages 255–291
DOI: https://doi.org/10.3367/UFNr.0158.198906c.0255
(Mi ufn7661)
 

This article is cited in 19 scientific papers (total in 19 papers)

REVIEWS OF TOPICAL PROBLEMS

Physical properties of the semiconductor-electrolyte interface

V. M. Arutyunyan

Yerevan State University
Abstract: This review discusses the structure of an electrical double layer formed at the semiconductor-electrolyte interface, as well as the energy states and imperfections in the electrolyte and on the semiconductor surface. A considerable part of the review is devoted to the results of investigations of photoelectric effects, luminescence, reflection, and electroreflection at this interface. The quantum size effects which occur in semiconductor electrodes and in colloids and the injection of hot electrons into an electrolyte are discussed in later sections of the review. A classification of photoelectrochemical cells is given and current data are provided on devices for conversion of solar or laser radiation energy into electrical and chemical energy.
English version:
Physics–Uspekhi, 1989, Volume 32, Issue 6, Pages 521–542
DOI: https://doi.org/10.1070/PU1989v032n06ABEH002726
Document Type: Article
UDC: 537.311.31/.322
PACS: 72.40.+w, 73.40.Mr, 78.55.Et, 82.45.Gj, 82.45.Vp
Language: Russian
Citation: V. M. Arutyunyan, “Physical properties of the semiconductor-electrolyte interface”, UFN, 158:2 (1989), 255–291; Phys. Usp., 32:6 (1989), 521–542
Citation in format AMSBIB
\Bibitem{Aru89}
\by V.~M.~Arutyunyan
\paper Physical properties of the semiconductor-electrolyte interface
\jour UFN
\yr 1989
\vol 158
\issue 2
\pages 255--291
\mathnet{http://mi.mathnet.ru/ufn7661}
\crossref{https://doi.org/10.3367/UFNr.0158.198906c.0255}
\transl
\jour Phys. Usp.
\yr 1989
\vol 32
\issue 6
\pages 521--542
\crossref{https://doi.org/10.1070/PU1989v032n06ABEH002726}
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  • This publication is cited in the following 19 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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