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Uspekhi Fizicheskikh Nauk, 1990, Volume 160, Number 11, Pages 167–196
DOI: https://doi.org/10.3367/UFNr.0160.199011f.0167
(Mi ufn7591)
 

This article is cited in 53 scientific papers (total in 53 papers)

FROM THE CURRENT LITERATURE

The Faraday effect in semimagnetic semiconductors

P. I. Nikitina, A. I. Savchukb

a General Physics Institute of the Academy of Sciences of the USSR, Moscow
b Chernovtsy State University
Abstract: A review of experimental and theoretical research on the Faraday effect in a new class of materials–semimagnetic semiconductors (SMS). The authors discuss the mechanism responsible for the giant Faraday effect in SMS, which is based on s, p–d exchange interactions of excitons, electrons, and holes with magnetic ions. The authors also examine the dependence of Faraday rotation (FR) on wavelength, magnetic component concentration, temperature, and magnetic field intensity in A$^2$B$^6\langle$Mn$\rangle$ and A$^2_{1-x}$Mn$_x$B$^6$ crystals, as well as other SMS (GaAs $\langle$Mn$\rangle$, CdP$_2\langle$Mn$\rangle$, Pb$_{1–x}$Mn$_x$I$_2$). They examine the use of FR in the study of the paramagnetic-spin glass transition, the role played by relaxation processes involving magnetic Mn$^{2+}$ ions, excitons, and polarons in the direct and inverse Faraday effects, and the properties of FR in thin SMS films and spin superlattices. Finally, the authors analyze possible applications of the Faraday effect in SMS to practical magnetooptic devices (optical isolators, fiber optic magnetic field sensors).
English version:
Physics–Uspekhi, 1990, Volume 33, Issue 11, Pages 974–989
DOI: https://doi.org/10.1070/PU1990v033n11ABEH002659
Document Type: Article
UDC: 621.315.592
PACS: 78.20.Ls, 71.70.Gm, 71.35.-y, 75.50.Pp, 78.66.Li, 85.70.Sq
Language: Russian
Citation: P. I. Nikitin, A. I. Savchuk, “The Faraday effect in semimagnetic semiconductors”, UFN, 160:11 (1990), 167–196; Phys. Usp., 33:11 (1990), 974–989
Citation in format AMSBIB
\Bibitem{NikSav90}
\by P.~I.~Nikitin, A.~I.~Savchuk
\paper The Faraday effect in semimagnetic semiconductors
\jour UFN
\yr 1990
\vol 160
\issue 11
\pages 167--196
\mathnet{http://mi.mathnet.ru/ufn7591}
\crossref{https://doi.org/10.3367/UFNr.0160.199011f.0167}
\transl
\jour Phys. Usp.
\yr 1990
\vol 33
\issue 11
\pages 974--989
\crossref{https://doi.org/10.1070/PU1990v033n11ABEH002659}
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