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Uspekhi Fizicheskikh Nauk, 2009, Volume 179, Number 4, Pages 359–368
DOI: https://doi.org/10.3367/UFNr.0179.200904b.0359 (Mi ufn749) 		 
This article is cited in 43 scientific papers (total in 43 papers)

REVIEWS OF TOPICAL PROBLEMS

Spintronics: exchange switching of ferromagnetic metallic junctions under low current density

Yu. V. Gulyaeva, P. E. Zil'bermanb, A. I. Panasb, E. M. Epshteinb

a Kotel'nikov Institute of Radio Engineering and Electronics, Russian Academy of Sciences, Moscow
b Kotel'nikov Institute of Radio Engineering and Electronics, Russian Academy of Sciences, Fryazino, Moscow region
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DOI: https://doi.org/10.3367/UFNr.0179.200904b.0359
Abstract: A review is given on the exchange switching of ferromagnetic metallic junctions under low threshold current. A dramatic (orders of magnitude) threshold current reduction is achieved under conditions which include the dominance of the current-driven nonequilibrium spin injection, the optimum relation between the spin resistances of the layers, and the application of an external magnetic field near the point of the reorientational phase transition.
Received: November 5, 2008
English version:
Physics–Uspekhi, 2009, Volume 52, Issue 4, Pages 335–343
DOI: https://doi.org/10.3367/UFNe.0179.200904b.0359
Bibliographic databases:
Document Type: Article
PACS: 72.25.Ba, 72.25.Hg, 75.47.-m
Language: Russian
Citation: Yu. V. Gulyaev, P. E. Zil'berman, A. I. Panas, E. M. Epshtein, “Spintronics: exchange switching of ferromagnetic metallic junctions under low current density”, UFN, 179:4 (2009), 359–368; Phys. Usp., 52:4 (2009), 335–343
Citation in format AMSBIB
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    • This publication is cited in the following 43 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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