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This article is cited in 36 scientific papers (total in 36 papers)
REVIEWS OF TOPICAL PROBLEMS
Zero-gap semiconductors with magnetic impurities forming resonance donor states
I. M. Tsidil'kovskii Institute of Metal Physics, Ural Division of the Russian Academy of Sciences, Ekaterinburg
Abstract:
We describe the anomalies in the electronic properties of zero-gap semiconductors doped with transition elements (iron, chromium) that form deep resonance donor states, i.e., states degenerate with the continuum of the conduction band. We present an analysis of the numerous studies that shows that the distinctiveness of the properties of the materials being discussed, in particular, such a marked anomaly as increased electron mobility with increasing concentration of the dopant, is due to the correlated distribution of the charged donors in the crystal. The study of resonance states in semiconductors is a new field in solid-state physics, which at the same time is of practical interest, since it enables one, for example, to obtain materials with maximal electron mobilities.
Received: April 24, 1991 Revised: September 18, 1991
Citation:
I. M. Tsidil'kovskii, “Zero-gap semiconductors with magnetic impurities forming resonance donor states”, UFN, 162:2 (1992), 63–105; Phys. Usp., 35:2 (1992), 85–105
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https://www.mathnet.ru/eng/ufn7235 https://www.mathnet.ru/eng/ufn/v162/i2/p63
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Abstract page: | 134 | Full-text PDF : | 13 |
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