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Uspekhi Fizicheskikh Nauk, 2019, Volume 189, Number 8, Pages 849–880
DOI: https://doi.org/10.3367/UFNr.2018.11.038486 (Mi ufn6385) 		 
This article is cited in 23 scientific papers (total in 23 papers)

REVIEWS OF TOPICAL PROBLEMS

Spintronics of semiconductor, metallic, dielectric, and hybrid structures (100th anniversary of the Ioffe Institute)

P. G. Baranova, A. M. Kalashnikovaa, V. I. Kozuba, V. L. Koreneva, Yu. G. Kusrayeva, R. V. Pisareva, V. F. Sapegaa, I. A. Akimovab, M. Bayerab, A. V Scherbakovab, D. R. Yakovlevab

a Ioffe Institute, St. Petersburg
b Experimental Physics II, TU Dortmund
Full-text PDF (1555 kB) Citations (23)
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DOI: https://doi.org/10.3367/UFNr.2018.11.038486
Abstract: Demands for miniaturization, increasing the operation speed and energy efficiency of electronic devices led to the emergence and rapid development of spin electronics, or spintronics. Several areas of experimental and theoretical research are considered, in which the Ioffe Institute is actively involved. We discuss current progress in developing semiconductor and hybrid structures that exhibit specified magnetic properties, the development of methods for manipulating individual spins, a theoretical description of switching of metallic heterostructures magnetization by an electric field, and ultrafast control of magnetization via manipulating the magnetic anisotropy by femtosecond laser pulses.
Funding agency Grant number
Russian Science Foundation 18-12-00352
16-12-10485
16-12-10456
Russian Foundation for Basic Research 15-52-12017-ННИО-а
19-52-12034-ННИО-а
15-52-12015-ННИО-а
16-02-00064-а
18-02-0082-а
Ministry of Education and Science of the Russian Federation 14.Z50.31.0021
Deutsche Forschungsgemeinschaft TRR-160 ICRC
The authors acknowledge financial support from the Russian Science Foundation (grants nos 18-12-00352, 16-12-10485, and 16-12-10456; the Russian Foundation for Basic Research (grants nos 15-52-12017-NNIO-a, 19-52-12034-NNIO-a, 15-52-12015-NNIO-a, 16-02-00064-a, and 18-02-0082-a; the Government of the Russian Federation (grant no. 14.Z50.31.0021 and Deutsche Forschungsgemeinschaft (TRR-160 ICRC project).
Received: September 7, 2018
Revised: September 19, 2018
Accepted: November 22, 2018
English version:
Physics–Uspekhi, 2019, Volume 62, Issue 8, Pages 795–822
DOI: https://doi.org/10.3367/UFNe.2018.11.038486
Bibliographic databases:
Document Type: Article
PACS: 75.30.Kz, 75.50.Bb, 75.50.Gg, 75.76.+j, 75.78.Jp, 76.70.Hb, 78.30.Fs, 78.55.Et, 85.75.-d
Language: Russian
Citation: P. G. Baranov, A. M. Kalashnikova, V. I. Kozub, V. L. Korenev, Yu. G. Kusrayev, R. V. Pisarev, V. F. Sapega, I. A. Akimov, M. Bayer, A. V Scherbakov, D. R. Yakovlev, “Spintronics of semiconductor, metallic, dielectric, and hybrid structures (100th anniversary of the Ioffe Institute)”, UFN, 189:8 (2019), 849–880; Phys. Usp., 62:8 (2019), 795–822
Citation in format AMSBIB
\Bibitem{BarKalKoz19}
\by P.~G.~Baranov, A.~M.~Kalashnikova, V.~I.~Kozub, V.~L.~Korenev, Yu.~G.~Kusrayev, R.~V.~Pisarev, V.~F.~Sapega, I.~A.~Akimov, M.~Bayer, A.~V~Scherbakov, D.~R.~Yakovlev
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