Uspekhi Fizicheskikh Nauk
RUS  ENG    JOURNALS   PEOPLE   ORGANISATIONS   CONFERENCES   SEMINARS   VIDEO LIBRARY   PACKAGE AMSBIB  
General information
Latest issue
Forthcoming papers
Archive
Impact factor
Guidelines for authors
Submit a manuscript

Search papers
Search references

RSS
Latest issue
Current issues
Archive issues
What is RSS



UFN:
Year:
Volume:
Issue:
Page:
Find






Personal entry:
Login:
Password:
Save password
Enter
Forgotten password?
Register


Uspekhi Fizicheskikh Nauk, 2008, Volume 178, Number 9, Pages 923–934
DOI: https://doi.org/10.3367/UFNr.0178.200809b.0923
(Mi ufn638)
 

This article is cited in 270 scientific papers (total in 270 papers)

PHYSICS OF OUR DAYS

Optical properties of graphene and IV–VI semiconductors

L. A. Falkovskyab

a Landau Institute for Theoretical Physics, Russian Academy of Sciences
b Vereshchagin Institute for High Pressure Physics, Russian Academy of Sciences
References:
Abstract: The frequency dispersion of the dynamic conductivity of graphene, of a multilayer graphene, and of IV–VI semiconductors is considered as a function of the temperature and carrier density in the range of frequencies that are higher than the carrier relaxation rate but are lower than the conduction band width. A narrow gap and the linearity of the electron spectrum, which are common features of these materials, are responsible for a singularity of the dielectric function (logarithmic in the real part and step-like in the imaginary part) at the threshold of direct interband transitions and, accordingly, for an anomalously large permittivity in IV–VI semiconductors. The calculated and measured dielectric functions are in a very good agreement. The graphene transmittance in the optical range is frequency-independent and its departure from unity yields the value of the fine structure constant. The difference in dimensionality, which is equal to three for semiconductors and to two for graphene, manifests itself in the different character of plasmons and of electromagnetic waves existing for high doping (or in conditions of the field effect) near the absorption threshold.
Received: March 31, 2008
English version:
Physics–Uspekhi, 2008, Volume 51, Issue 9, Pages 887–897
DOI: https://doi.org/10.1070/PU2008v051n09ABEH006625
Bibliographic databases:
Document Type: Article
PACS: 71.20.Nr, 78.20.Bh, 78.20.Ci, 78.66.Tr
Language: Russian
Citation: L. A. Falkovsky, “Optical properties of graphene and IV–VI semiconductors”, UFN, 178:9 (2008), 923–934; Phys. Usp., 51:9 (2008), 887–897
Citation in format AMSBIB
\Bibitem{Fal08}
\by L.~A.~Falkovsky
\paper Optical properties of graphene and IV--VI semiconductors
\jour UFN
\yr 2008
\vol 178
\issue 9
\pages 923--934
\mathnet{http://mi.mathnet.ru/ufn638}
\crossref{https://doi.org/10.3367/UFNr.0178.200809b.0923}
\adsnasa{https://adsabs.harvard.edu/cgi-bin/bib_query?2008PhyU...51..887F}
\transl
\jour Phys. Usp.
\yr 2008
\vol 51
\issue 9
\pages 887--897
\crossref{https://doi.org/10.1070/PU2008v051n09ABEH006625}
\isi{https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=Publons&SrcAuth=Publons_CEL&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=000262359700002}
\scopus{https://www.scopus.com/record/display.url?origin=inward&eid=2-s2.0-58449105705}
Linking options:
  • https://www.mathnet.ru/eng/ufn638
  • https://www.mathnet.ru/eng/ufn/v178/i9/p923
  • This publication is cited in the following 270 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    Успехи физических наук Physics-Uspekhi
     
      Contact us:
     Terms of Use  Registration to the website  Logotypes © Steklov Mathematical Institute RAS, 2024