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This article is cited in 12 scientific papers (total in 13 papers)
REVIEWS OF TOPICAL PROBLEMS
Two-dimensional system of strongly interacting electrons in silicon (100) structures
V. T. Dolgopolovab a Institute of Solid State Physics, Russian Academy of Sciences, Chernogolovka, Moscow region
b Editorial Board of JETP Letters
Abstract:
Studies of various experimental groups that explore the properties of a two-dimensional electron gas in silicon semiconductor systems ((100) Si-MOSFET and (100) SiGe/Si/SiGe quantum wells) in the vicinity of the metal–insulator transition are described and critically analyzed. Results are identified that are common to all research: (i) the effective mass of electrons measured at the Fermi level in the metallic region increases as the electron density decreases and, if extrapolated, tends to diverge; (ii) the behavior of the energy-averaged mass in the metallic region is quite different in the two systems: in Si-MOSFETs, it also exhibits a tendency to diverge, while in the SiGe/Si/SiGe quantum wells it saturates in the limit of low electron densities; (iii) there is a small number (depending on the sample quality) of localized electrons in the metallic phase; (iv) the properties that the electron system exhibits in the insulating phase in the vicinity of the metal–insulator transition are typical of amorphous media with a strong coupling between particles.
Received: April 28, 2018 Revised: October 7, 2018 Accepted: October 16, 2018
Citation:
V. T. Dolgopolov, “Two-dimensional system of strongly interacting electrons in silicon (100) structures”, UFN, 189:7 (2019), 673–690; Phys. Usp., 62:7 (2019), 633–648
Linking options:
https://www.mathnet.ru/eng/ufn6301 https://www.mathnet.ru/eng/ufn/v189/i7/p673
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