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Uspekhi Fizicheskikh Nauk, 2018, Volume 188, Number 12, Pages 1288–1330
DOI: https://doi.org/10.3367/UFNr.2018.01.038279 (Mi ufn6120) 		 
This article is cited in 192 scientific papers (total in 193 papers)

REVIEWS OF TOPICAL PROBLEMS

Straintronics: a new trend in micro- and nanoelectronics and materials science

A. A. Bukharaeva, A. K. Zvezdinbcd, A. P. Pyatakove, Yu. K. Fetisovf

a Zavoisky Kazan Physicotechnical Institute, Federal Research Center "Kazan Scientific Centre of the Russian Academy of Sciences"
b Prokhorov General Physics Institute, Russian Academy of Sciences, Moscow
c Lebedev Physical Institute, Russian Academy of Sciences, Moscow
d Moscow Institute of Physics and Technology (State University), Dolgoprudny, Moscow region
e Faculty of Physics, Lomonosov Moscow State University
f MIREA — Russian Technological University,
Full-text PDF (3237 kB) Citations (193)
DOI: https://doi.org/10.3367/UFNr.2018.01.038279
Abstract: The term ‘straintronics’ refers to a new research area in condensed matter physics, in which strain engineering methods and strain-induced physical effects in solids are used to develop next-generation devices for information, sensor, and energy-saving technologies. This paper reviews the basic ideas of straintronics, examines the underlying effects, highlights its advantages over conventional electronics, and identifies the problems it faces and fundamental constraints it is subject to. Special attention is given to the straintronics of magnetic and magnetoelectric materials as the most promising area for radically reducing computational energy consumption. Specific examples are presented of how the principles of straintronics are applied practically in information and energy-saving technologies, as well as in sensor and microwave engineering.
Funding agency Grant number
Russian Foundation for Basic Research 16-29-14037
16-29-14017
15-02-02728
16-29-14017
18-02-00204
16-02-00494
Ministry of Education and Science of the Russian Federation 8.1183.2017/ПЧ
This study was supported by grants 16-29-14037 and 16-29-14017 from the Russian Foundation for Basic Research (RFBR) for topic 614, “Straintronics as a platform for the development of a new generation of information processing devices”, by RFBR grants 15-02-02728, 18-02-00204, and 16-02-00494, and also by the Ministry of Education and Science of the Russian Federation (project No. 8.1183.2017/PCh).
Received: September 6, 2017
Revised: January 15, 2018
Accepted: January 16, 2018
English version:
Physics–Uspekhi, 2018, Volume 61, Issue 12, Pages 1175–1212
DOI: https://doi.org/10.3367/UFNe.2018.01.038279
Bibliographic databases:
Document Type: Article
PACS: 75.80.+q, 75.85.+t
Language: Russian
Citation: A. A. Bukharaev, A. K. Zvezdin, A. P. Pyatakov, Yu. K. Fetisov, “Straintronics: a new trend in micro- and nanoelectronics and materials science”, UFN, 188:12 (2018), 1288–1330; Phys. Usp., 61:12 (2018), 1175–1212
Citation in format AMSBIB
\Bibitem{BukZvePya18}
\by A.~A.~Bukharaev, A.~K.~Zvezdin, A.~P.~Pyatakov, Yu.~K.~Fetisov
\paper Straintronics: a new trend in micro- and nanoelectronics and materials science
\jour UFN
\yr 2018
\vol 188
\issue 12
\pages 1288--1330
\mathnet{http://mi.mathnet.ru/ufn6120}
\crossref{https://doi.org/10.3367/UFNr.2018.01.038279}
\adsnasa{https://adsabs.harvard.edu/cgi-bin/bib_query?2018PhyU...61.1175B}
\elib{https://elibrary.ru/item.asp?id=36544235}
\transl
\jour Phys. Usp.
\yr 2018
\vol 61
\issue 12
\pages 1175--1212
\crossref{https://doi.org/10.3367/UFNe.2018.01.038279}
\isi{https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=Publons&SrcAuth=Publons_CEL&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=000459955400002}
\scopus{https://www.scopus.com/record/display.url?origin=inward&eid=2-s2.0-85062793687}
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    This publication is cited in the following 193 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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