Uspekhi Fizicheskikh Nauk
RUS  ENG    JOURNALS   PEOPLE   ORGANISATIONS   CONFERENCES   SEMINARS   VIDEO LIBRARY   PACKAGE AMSBIB  
General information
Latest issue
Forthcoming papers
Archive
Impact factor
Guidelines for authors
Submit a manuscript

Search papers
Search references

RSS
Latest issue
Current issues
Archive issues
What is RSS



UFN:
Year:
Volume:
Issue:
Page:
Find






Personal entry:
Login:
Password:
Save password
Enter
Forgotten password?
Register


Uspekhi Fizicheskikh Nauk, 2018, Volume 188, Number 9, Pages 913–934
DOI: https://doi.org/10.3367/UFNr.2017.07.038172
(Mi ufn6071)
 

This article is cited in 58 scientific papers (total in 60 papers)

REVIEWS OF TOPICAL PROBLEMS

Excitons and trions in two-dimensional semiconductors based on transition metal dichalcogenides

M. V. Durnev, M. M. Glazov

Ioffe Institute, Russian Academy of Sciences, St. Petersburg
References:
Abstract: Theoretical and experimental results on excitonic effects in monomolecular layers of transition metal dichalcogenides are reviewed. These two-dimensional semiconductors exhibit a direct bandgap of about 2 eV at the Brillouin zone edges, and the binding energies of their neutral and charged excitons are in the range of hundreds and tens of millielectronvolts, respectively. This implies that electron–hole complexes determine the optical properties of transition metal dichalcogenide monolayers. Topics discussed in this review include the band structure details needed to understand the excitonic effects in these materials, the structure and fine structure of exciton and trion energy levels, the features of the spin and valley dynamics of Coulomb complexes, and how neutral and charged excitons manifest themselves in linear and nonlinear optical effects.
Funding agency Grant number
Russian Science Foundation 14-12-01067
This study was supported in part by the Russian Science Foundation, project No. 14-12-01067.
Received: July 4, 2017
Revised: July 14, 2017
Accepted: July 14, 2017
English version:
Physics–Uspekhi, 2018, Volume 61, Issue 9, Pages 825–845
DOI: https://doi.org/10.3367/UFNe.2017.07.038172
Bibliographic databases:
Document Type: Article
PACS: 71.35.-y, 73.20.Mf, 78.67.-n
Language: Russian
Citation: M. V. Durnev, M. M. Glazov, “Excitons and trions in two-dimensional semiconductors based on transition metal dichalcogenides”, UFN, 188:9 (2018), 913–934; Phys. Usp., 61:9 (2018), 825–845
Citation in format AMSBIB
\Bibitem{DurGla18}
\by M.~V.~Durnev, M.~M.~Glazov
\paper Excitons and trions in two-dimensional semiconductors based on transition metal dichalcogenides
\jour UFN
\yr 2018
\vol 188
\issue 9
\pages 913--934
\mathnet{http://mi.mathnet.ru/ufn6071}
\crossref{https://doi.org/10.3367/UFNr.2017.07.038172}
\adsnasa{https://adsabs.harvard.edu/cgi-bin/bib_query?2018PhyU...61..825D}
\elib{https://elibrary.ru/item.asp?id=37272312}
\transl
\jour Phys. Usp.
\yr 2018
\vol 61
\issue 9
\pages 825--845
\crossref{https://doi.org/10.3367/UFNe.2017.07.038172}
\isi{https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=Publons&SrcAuth=Publons_CEL&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=000452480000001}
\scopus{https://www.scopus.com/record/display.url?origin=inward&eid=2-s2.0-85058448965}
Linking options:
  • https://www.mathnet.ru/eng/ufn6071
  • https://www.mathnet.ru/eng/ufn/v188/i9/p913
  • This publication is cited in the following 60 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    Успехи физических наук Physics-Uspekhi
    Statistics & downloads:
    Abstract page:458
    Full-text PDF :77
    References:50
    First page:15
     
      Contact us:
     Terms of Use  Registration to the website  Logotypes © Steklov Mathematical Institute RAS, 2024