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Uspekhi Fizicheskikh Nauk, 2017, Volume 187, Number 11, Pages 1147–1168
DOI: https://doi.org/10.3367/UFNr.2017.01.038055 (Mi ufn5879) 		 
This article is cited in 7 scientific papers (total in 7 papers)

REVIEWS OF TOPICAL PROBLEMS

Tunneling features in semiconductor nanostructures

P. I. Arseevab, V. N. Mantsevichc, N. S. Maslovac, V. I. Panovc

a Lebedev Physical Institute, Russian Academy of Sciences, Moscow
b National Research University "Higher School of Economics" (HSE), Moscow
c Lomonosov Moscow State University
Full-text PDF (1308 kB) Citations (7)
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DOI: https://doi.org/10.3367/UFNr.2017.01.038055
Abstract: The most telling scanning tunneling microscopy/spectroscopy (STM/STS) data available on the influence of nonequilibrium tunneling effects and electronic spectra reconstruction are reviewed and theoretically explained by self-consistently accounting for nonequilibrium electron distribution and the change (due to the tunneling current) in the electron density of states near the tunneling junction. The paper discusses the basic ideas of the self-consistent tunneling theory, which forms the basis for experimental research and which allows many effects observed in STM/STS experiments to be explained and new phenomena to be predicted.
Funding agency Grant number
Russian Science Foundation 16-12-00072
This study was supported by the Russian Science Foundation under the grant 16-12-00072.
Received: December 12, 2016
Accepted: January 28, 2017
English version:
Physics–Uspekhi, 2017, Volume 60, Issue 11, Pages 1067–1086
DOI: https://doi.org/10.3367/UFNe.2017.01.038055
Bibliographic databases:
Document Type: Article
PACS: 05.60.Gg, 68.37.Ef, 73.40.Gk, 73.63.-b
Language: Russian
Citation: P. I. Arseev, V. N. Mantsevich, N. S. Maslova, V. I. Panov, “Tunneling features in semiconductor nanostructures”, UFN, 187:11 (2017), 1147–1168; Phys. Usp., 60:11 (2017), 1067–1086
Citation in format AMSBIB
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