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This article is cited in 41 scientific papers (total in 41 papers)
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Vacancy–impurity centers in diamond: prospects for synthesis and applications
E. A. Ekimov, M. V. Kondrin Vereshchagin Institute for High Pressure Physics, Russian Academy of Sciences
Abstract:
The bright luminescence of impurity–vacancy complexes, combined with high chemical and radiation resistance, makes diamond an attractive platform for the production of single-photon emitters and luminescent biomarkers for applications in nanoelectronics and medicine. Two representatives of this kind of defects in diamond, silicon-vacancy (SiV) and germanium-vacancy (GeV) centers, are discussed in this review; their similarities and differences are demonstrated in terms of the more thoroughly studied nitrogen-vacancy (NV) complexes. The recent discovery of GeV luminescent centers opens a unique opportunity for the controlled synthesis of single-photon emitters in nanodiamonds. We demonstrate prospects for the high-pressure high-temperature (HPHT) technique to create single-photon emitters, not only as an auxiliary to chemical vapor deposition (CVD) and ion-implantation methods but also as a primary synthesis tool for producing color centers in nanodiamonds. Besides practical applications, comparative studies of these two complexes, which belong to the same structural class of defects, have a fundamental importance for deeper understanding of shelving levels, the electronic structure, and optical properties of these centers. In conclusion, we discuss several open problems regarding the structure, charge state, and practical application of these centers, which still require a solution.
Received: July 20, 2016 Revised: October 31, 2016 Accepted: November 8, 2016
Citation:
E. A. Ekimov, M. V. Kondrin, “Vacancy–impurity centers in diamond: prospects for synthesis and applications”, UFN, 187:6 (2017), 577–598; Phys. Usp., 60:6 (2017), 539–558
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https://www.mathnet.ru/eng/ufn5755 https://www.mathnet.ru/eng/ufn/v187/i6/p577
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Abstract page: | 295 | Full-text PDF : | 49 | References: | 26 | First page: | 6 |
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