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Uspekhi Fizicheskikh Nauk, 2017, Volume 187, Number 2, Pages 173–191
DOI: https://doi.org/10.3367/UFNr.2016.06.037827
(Mi ufn5605)
 

This article is cited in 37 scientific papers (total in 37 papers)

REVIEWS OF TOPICAL PROBLEMS

Third-generation Cu-In-Ga-(S, Se)-based solar inverters

G. F. Novikov, M. V. Gapanovich

Institute of Problems of Chemical Physics, Russian Academy of Sciences, Chernogolovka, Moscow region
References:
Abstract: This paper reviews literature data on thin-film solar cells with absorber layers based on quaternary copper compounds Cu-In-Ga-(S, Se) (CIGS). The paper considers methods of preparation of CIGS layers and discusses the chemical composition, design features, and operating principles of CIGS-based solar cells. The bulk of the recent literature reveals how research in the field is starting to change: important results are being obtained by numerically simulating processes in thin-film solar cells; element concentration gradients in the CIGS structure, spatially nonuniform bandgap energy distribution, and layer grain boundaries are receiving increasing research attention for their respective roles, and the number of kinetic studies is increasing.
Funding agency Grant number
Russian Foundation for Basic Research 16-08-01234
The work was carried out with the financial support of RFBR grant No. 16-08-01234.
Received: March 23, 2016
Revised: June 3, 2016
Accepted: June 9, 2016
English version:
Physics–Uspekhi, 2017, Volume 60, Issue 2, Pages 161–178
DOI: https://doi.org/10.3367/UFNe.2016.06.037827
Bibliographic databases:
Document Type: Article
PACS: 81.05.Hd, 84.60.Jt, 88.40.fc, 88.40.jn
Language: Russian
Citation: G. F. Novikov, M. V. Gapanovich, “Third-generation Cu-In-Ga-(S, Se)-based solar inverters”, UFN, 187:2 (2017), 173–191; Phys. Usp., 60:2 (2017), 161–178
Citation in format AMSBIB
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  • This publication is cited in the following 37 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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