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This article is cited in 37 scientific papers (total in 37 papers)
REVIEWS OF TOPICAL PROBLEMS
Third-generation Cu-In-Ga-(S, Se)-based solar inverters
G. F. Novikov, M. V. Gapanovich Institute of Problems of Chemical Physics, Russian Academy of Sciences, Chernogolovka, Moscow region
Abstract:
This paper reviews literature data on thin-film solar cells with absorber layers based on quaternary copper compounds Cu-In-Ga-(S, Se) (CIGS). The paper considers methods of preparation of CIGS layers and discusses the chemical composition, design features, and operating principles of CIGS-based solar cells. The bulk of the recent literature reveals how research in the field is starting to change: important results are being obtained by numerically simulating processes in thin-film solar cells; element concentration gradients in the CIGS structure, spatially nonuniform bandgap energy distribution, and layer grain boundaries are receiving increasing research attention for their respective roles, and the number of kinetic studies is increasing.
Received: March 23, 2016 Revised: June 3, 2016 Accepted: June 9, 2016
Citation:
G. F. Novikov, M. V. Gapanovich, “Third-generation Cu-In-Ga-(S, Se)-based solar inverters”, UFN, 187:2 (2017), 173–191; Phys. Usp., 60:2 (2017), 161–178
Linking options:
https://www.mathnet.ru/eng/ufn5605 https://www.mathnet.ru/eng/ufn/v187/i2/p173
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Abstract page: | 316 | Full-text PDF : | 78 | References: | 32 | First page: | 8 |
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