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Uspekhi Fizicheskikh Nauk, 2016, Volume 186, Number 5, Pages 518–523
DOI: https://doi.org/10.3367/UFNr.2014.12.037745 (Mi ufn5487) 		 
This article is cited in 1 scientific paper (total in 1 paper)

NOBEL LECTURES IN PHYSICS — 2014

Growth of GaN on sapphire via low-temperature deposited buffer layer and realization of p-type GaN by Mg doping followed by low-energy electron beam irradiation

H. Amano

Department of Electrical Engineering and Computer Science, Venture Business Laboratory, Akasaki Research Center, Nagoya University, Japan
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DOI: https://doi.org/10.3367/UFNr.2014.12.037745
Abstract: Nobel lecture, December 8, 2014
Received: December 2, 2015
Accepted: December 8, 2014
English version:
Physics–Uspekhi
DOI: https://doi.org/10.3367/UFNe.2014.12.037745
Bibliographic databases:
Document Type: Article
PACS: 42.72.Bj, 81.10.-h, 85.60.Dw
Language: Russian
Citation: H. Amano, “Growth of GaN on sapphire via low-temperature deposited buffer layer and realization of p-type GaN by Mg doping followed by low-energy electron beam irradiation”, UFN, 186:5 (2016), 518–523
Citation in format AMSBIB
\Bibitem{Ama16}
\by H.~Amano
\paper Growth of GaN on sapphire via low-temperature deposited buffer layer and realization of p-type GaN by Mg doping followed by low-energy electron beam irradiation
\jour UFN
\yr 2016
\vol 186
\issue 5
\pages 518--523
\mathnet{http://mi.mathnet.ru/ufn5487}
\crossref{https://doi.org/10.3367/UFNr.2014.12.037745}
\elib{https://elibrary.ru/item.asp?id=26664734}
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  • https://www.mathnet.ru/eng/ufn/v186/i5/p518
    NOBEL LECTURES
    This publication is cited in the following 1 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    		Успехи физических наук Physics-Uspekhi
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    Abstract page:180
    Full-text PDF :56
    References:26
     
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