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Uspekhi Fizicheskikh Nauk, 2014, Volume 184, Number 10, Pages 1033–1044
DOI: https://doi.org/10.3367/UFNr.0184.201410b.1033 (Mi ufn4930) 		 
This article is cited in 30 scientific papers (total in 30 papers)

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Terahertz photoconductivity and nontrivial local electronic states in doped lead telluride-based semiconductors

L. I. Ryabovaa, D. R. Khokhlovbc

a Faculty of Chemistry, Lomonosov Moscow State University
b Lebedev Physical Institute, Russian Academy of Sciences, Moscow
c Faculty of Physics, Lomonosov Moscow State University
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DOI: https://doi.org/10.3367/UFNr.0184.201410b.1033
Abstract: This paper reviews unusual photoelectric effects observed in doped narrow-gap PbTe-based semiconductors exposed to intense terahertz laser pulses. It is shown that in some cases these effects are due to those (nontrivial) local electronic states that, unlike ordinary, spectrally defined impurity states, are linked to the quasi-Fermi level, whose position can be varied by changing the degree of photoexcitation.
Received: January 15, 2014
Revised: February 8, 2014
Accepted: February 11, 2014
English version:
Physics–Uspekhi, 2014, Volume 57, Issue 10, Pages 959–969
DOI: https://doi.org/10.3367/UFNe.0184.201410b.1033
Bibliographic databases:
Document Type: Article
PACS: 72.40.+w, 73.20.Hb
Language: Russian
Citation: L. I. Ryabova, D. R. Khokhlov, “Terahertz photoconductivity and nontrivial local electronic states in doped lead telluride-based semiconductors”, UFN, 184:10 (2014), 1033–1044; Phys. Usp., 57:10 (2014), 959–969
Citation in format AMSBIB
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    • This publication is cited in the following 30 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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