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Uspekhi Fizicheskikh Nauk, 2004, Volume 174, Number 4, Pages 383–405
DOI: https://doi.org/10.3367/UFNr.0174.200404d.0383 (Mi ufn33) 		 
This article is cited in 13 scientific papers (total in 13 papers)

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Scanning tunneling microscopy studies of III-nitride thin film heteroepitaxial growth

R. Z. Bakhtizina, Q.-Zh. Xueb, Q.-K. Xuec, K.-H. Wub, T. Sakuraib

a Department of Physical Electronics, Bashkir State University
b Institute for Materials Research, Tohoku University
c State key Lab for Surface Science, Institute of Physics, The Chinese Academy of Sciences
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DOI: https://doi.org/10.3367/UFNr.0174.200404d.0383
Abstract: The current status of studies and new trends in obtaining and exploring surface characteristics of III-nitride semiconductors are analyzed and reviewed. Using a unique setup combining a scanning tunneling microscope (STM) with an inline molecular-beam epitaxy (MBE) chamber, the surface atomic structures on both hexagonal and cubic GaN films grown by nitrogen-plasma-assisted MBE have been studied \it{in situ} over a broad range of temperatures and [N]/[Ga] ratios. Models of the observed surface phases are developed based on the comparative analysis of their atomic-resolution STM images and ab initio total energy calculations.
Received: April 14, 2003
Revised: October 27, 2003
English version:
Physics–Uspekhi, 2004, Volume 47, Issue 4, Pages 371–391
DOI: https://doi.org/10.1070/PU2004v047n04ABEH001643
Bibliographic databases:
Document Type: Article
PACS: 61.14.Hg, 71.15.Nc, 81.05.Ea
Language: Russian
Citation: R. Z. Bakhtizin, Q.-Zh. Xue, Q.-K. Xue, K.-H. Wu, T. Sakurai, “Scanning tunneling microscopy studies of III-nitride thin film heteroepitaxial growth”, UFN, 174:4 (2004), 383–405; Phys. Usp., 47:4 (2004), 371–391
Citation in format AMSBIB
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\jour Phys. Usp.
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\pages 371--391
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    • This publication is cited in the following 13 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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