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This article is cited in 1 scientific paper (total in 1 paper)
CONFERENCES AND SYMPOSIA
Interaction effects in the transport and magnetotransport of two-dimensional electrons in AlGaAs/GaAs and Si/SiGe heterojunctions
E. B. Olshanetskiia, V. Renardb, Z. D. Kvona, I. V. Gornyicd, A. I. Toropova, J. C. Portalb a Institute of Semiconductor Physics, SB RAS
b GHML, MPI-FKF/CNRS, Grenoble
c Institute for Nanotechnologies, Karlsruhe
d Ioffe Physico-Technical Institute, Russian Academy of Sciences
Citation:
E. B. Olshanetskii, V. Renard, Z. D. Kvon, I. V. Gornyi, A. I. Toropov, J. C. Portal, “Interaction effects in the transport and magnetotransport of two-dimensional electrons in AlGaAs/GaAs and Si/SiGe heterojunctions”, UFN, 176:2 (2006), 222–227; Phys. Usp., 49:2 (2006), 211–216
Linking options:
https://www.mathnet.ru/eng/ufn282 https://www.mathnet.ru/eng/ufn/v176/i2/p222
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Abstract page: | 204 | Full-text PDF : | 73 | References: | 36 | First page: | 1 |
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