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Uspekhi Fizicheskikh Nauk, 2006, Volume 176, Number 2, Pages 222–227
DOI: https://doi.org/10.3367/UFNr.0176.200602g.0222 (Mi ufn282) 		 
This article is cited in 1 scientific paper (total in 1 paper)

CONFERENCES AND SYMPOSIA

Interaction effects in the transport and magnetotransport of two-dimensional electrons in AlGaAs/GaAs and Si/SiGe heterojunctions

E. B. Olshanetskiia, V. Renardb, Z. D. Kvona, I. V. Gornyicd, A. I. Toropova, J. C. Portalb

a Institute of Semiconductor Physics, SB RAS
b GHML, MPI-FKF/CNRS, Grenoble
c Institute for Nanotechnologies, Karlsruhe
d Ioffe Physico-Technical Institute, Russian Academy of Sciences
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DOI: https://doi.org/10.3367/UFNr.0176.200602g.0222
English version:
Physics–Uspekhi, 2006, Volume 49, Issue 2, Pages 211–216
DOI: https://doi.org/10.1070/PU2006v049n02ABEH005923
Bibliographic databases:
Document Type: Article
PACS: 01.10.Fv, 71.27.+a, 71.30.+h, 72.15.Rn
Language: Russian
Citation: E. B. Olshanetskii, V. Renard, Z. D. Kvon, I. V. Gornyi, A. I. Toropov, J. C. Portal, “Interaction effects in the transport and magnetotransport of two-dimensional electrons in AlGaAs/GaAs and Si/SiGe heterojunctions”, UFN, 176:2 (2006), 222–227; Phys. Usp., 49:2 (2006), 211–216
Citation in format AMSBIB
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\vol 176
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    CONFERENCES AND SYMPOSIA
    This publication is cited in the following 1 articles:
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