B. A. Volkov, “Electronic properties of narrow gap IV–VI semiconductors”, UFN, 173:9 (2003), 1013–1015; Phys. Usp., 46:9 (2003), 984

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Uspekhi Fizicheskikh Nauk, 2003, Volume 173, Number 9, Pages 1013–1015
DOI: https://doi.org/10.3367/UFNr.0173.200309j.1013 (Mi ufn2182)

This article is cited in 1 scientific paper (total in 1 paper)

CONFERENCES AND SYMPOSIA

Electronic properties of narrow gap IV–VI semiconductors

B. A. Volkov

P. N. Lebedev Physical Institute, Russian Academy of Sciences

Full-text PDF (714 kB) Citations (1)

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DOI: https://doi.org/10.3367/UFNr.0173.200309j.1013

English version:
Physics–Uspekhi, 2003, Volume 46, Issue 9, Pages 984–986
DOI: https://doi.org/10.1070/PU2003v046n09ABEH001645

Bibliographic databases:

Document Type: Article

PACS: 71.20.Nr, 73.20.-r

Language: Russian

Citation: B. A. Volkov, “Electronic properties of narrow gap IV–VI semiconductors”, UFN, 173:9 (2003), 1013–1015; Phys. Usp., 46:9 (2003), 984–986

Citation in format AMSBIB

\Bibitem{Vol03}

\by B.~A.~Volkov

\paper Electronic properties of narrow gap IV–VI semiconductors

\jour UFN

\yr 2003

\vol 173

\issue 9

\pages 1013--1015

\mathnet{http://mi.mathnet.ru/ufn2182}

\crossref{https://doi.org/10.3367/UFNr.0173.200309j.1013}

\adsnasa{https://adsabs.harvard.edu/cgi-bin/bib_query?2003PhyU...46..984V}

\transl

\jour Phys. Usp.

\yr 2003

\vol 46

\issue 9

\pages 984--986

\crossref{https://doi.org/10.1070/PU2003v046n09ABEH001645}

\isi{https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=Publons&SrcAuth=Publons_CEL&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=000188171400009}

Linking options:

https://www.mathnet.ru/eng/ufn2182

https://www.mathnet.ru/eng/ufn/v173/i9/p1013

CONFERENCES AND SYMPOSIA

Joint scientific session of the Physical Sciences Division of the Russian Academy of Sciences and the Joint Physical Society of the Russian Federation (16 April 2003)
UFN, 2003, 173:9, 995–1021
Polariton – polariton scattering and the nonequilibrium condensation of exciton polaritons in semiconductor microcavities
V. D. Kulakovskii, D. N. Krizhanovskii, A. I. Tartakovskii, N. A. Gippius, S. G. Tikhodeev
UFN, 2003, 173:9, 995–999
Magnetically stabilized multiparticle bound states in semiconductors
N. N. Sibel'din
UFN, 2003, 173:9, 999–1008
Spontaneous atomic radiation in the presence of nanobodies
V. V. Klimov
UFN, 2003, 173:9, 1008–1013
Electronic properties of narrow gap IV–VI semiconductors
B. A. Volkov
UFN, 2003, 173:9, 1013–1015
New semiconductor laser designs and the exploratory investigation of the terahertz frequency range
A. A. Belyanin, D. Deppe, V. V. Kocharovsky, V. V. Kocharovskii, D. S. Pestov, M. O. Sculli
UFN, 2003, 173:9, 1015–1021

This publication is cited in the following 1 articles:

Citing articles in Google Scholar: Russian citations, English citations
Related articles in Google Scholar: Russian articles, English articles

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Abstract page:	243
Full-text PDF :	85
References:	38
First page:	1

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