B. A. Volkov, L. I. Ryabova, D. R. Khokhlov, “Mixed-valence impurities in lead telluride-based solid solutions”, UFN, 172:8 (2002), 875–906; Phys. Usp., 45:8 (2002), 819

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Uspekhi Fizicheskikh Nauk, 2002, Volume 172, Number 8, Pages 875–906
DOI: https://doi.org/10.3367/UFNr.0172.200208b.0875 (Mi ufn2042)

This article is cited in 270 scientific papers (total in 270 papers)

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Mixed-valence impurities in lead telluride-based solid solutions

B. A. Volkov^a, L. I. Ryabova^b, D. R. Khokhlov^c

^a P. N. Lebedev Physical Institute, Russian Academy of Sciences, Moscow
^b Lomonosov Moscow State University, Faculty of Chemistry
^c Lomonosov Moscow State University, Faculty of Physics

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DOI: https://doi.org/10.3367/UFNr.0172.200208b.0875

Abstract: Experimental data on impurity states in narrow-gap lead telluride based semiconductors are summarized. Theoretical models describing the nontrivial properties of such states are presented. Applications to the design of highly sensitive far-infrared detectors are considered.

Received: November 21, 2001

English version:
Physics–Uspekhi, 2002, Volume 45, Issue 8, Pages 819–846
DOI: https://doi.org/10.1070/PU2002v045n08ABEH001146

Bibliographic databases:

Document Type: Article

PACS: 71.23.An, 71.55.-i, 85.60.Gz

Language: Russian

Citation: B. A. Volkov, L. I. Ryabova, D. R. Khokhlov, “Mixed-valence impurities in lead telluride-based solid solutions”, UFN, 172:8 (2002), 875–906; Phys. Usp., 45:8 (2002), 819–846

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https://www.mathnet.ru/eng/ufn/v172/i8/p875

This publication is cited in the following 270 articles:

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