Nanosecond semiconductor diodes for pulsed power switching

The development of semiconductor-based nano- and subnanosecond high current breakers is crucial for advancing modern research in experimental physics and radioelectronics, particularly with increasing power (to $10^{10}$ W) and repetition rate (to $10^4$ Hz) of impulse devices. Highlighted in this review are two types of silicon diodes: drift step recovery diodes (DSRDs) and SOS diodes with the attainable current densities and switched-off powers being $10^2$ A cm$^{-2}$ and $10^8$ W in the former case, and $10^5$ A cm$^{-2}$ and $10^{10}$ W in the latter. The possibility of utilizing not only monocrystalline silicon (as in DSRDs and SOS diodes) for the base material but also monocrystalline silicon carbide is examined.