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This article is cited in 33 scientific papers (total in 33 papers)
REVIEWS OF TOPICAL PROBLEMS
β-SiC(100) surface: atomic structures and electronic properties
V. Yu. Aristov Institute of Solid State Physics, Russian Academy of Sciences
Abstract:
This review organizes and presents the state of the art of research related to the composition, atomic and electronic structure, and electronic properties of various superstructures that were recently shown to exist on clean β-SiC(100) surfaces. In the past 10 years, considerable experimental and theoretical progress in clean β-SiC(100) surfaces has been made. In particular, various surface reconstructions have been identified and studied, and the controlled formation of highly stable, very long straight lines of Si dimers self-organizing on a β-SiC(100) surface have been found, with the line separation being determined by the annealing time and temperature. Many aspects of the field (composition, unit cell models, etc.) are still subject to debate, however.
Received: March 28, 2001
Citation:
V. Yu. Aristov, “β-SiC(100) surface: atomic structures and electronic properties”, UFN, 171:8 (2001), 801–826; Phys. Usp., 44:8 (2001), 761–783
Linking options:
https://www.mathnet.ru/eng/ufn1900 https://www.mathnet.ru/eng/ufn/v171/i8/p801
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