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This article is cited in 91 scientific papers (total in 91 papers)
METHODOLOGICAL NOTES
Integrating magnetism into semiconductor electronics
B. P. Zakharchenya, V. L. Korenev Ioffe Physico-Technical Institute, Russian Academy of Sciences
Abstract:
The view of a ferromagnetic–semiconducting hybrid structure as a single tunable system is presented. Based on an analysis of existing experiments it is shown that, contrary to a ‘common sense’, a nonmagnetic semiconductor is capable of playing an important role in controlling ferromagnetism. Magnetic properties of a hybrid (the hysteresis loop and the spatial orientation of magnetization) can be tuned both optically and electrically by utilizing semiconductor—making the hybrid an electronic-write-in and electronic-read-out elementary storage unit.
Received: December 8, 2004
Citation:
B. P. Zakharchenya, V. L. Korenev, “Integrating magnetism into semiconductor electronics”, UFN, 175:6 (2005), 629–635; Phys. Usp., 48:6 (2005), 603–608
Linking options:
https://www.mathnet.ru/eng/ufn189 https://www.mathnet.ru/eng/ufn/v175/i6/p629
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