B. N. Mukashev, Kh. A. Abdullin, Yu. V. Gorelkinskii, “Metastable and bistable defects in silicon”, UFN, 170:2 (2000), 143–155; Phys. Usp., 43:2 (2000), 139

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Uspekhi Fizicheskikh Nauk, 2000, Volume 170, Number 2, Pages 143–155
DOI: https://doi.org/10.3367/UFNr.0170.200002b.0143 (Mi ufn1705)

This article is cited in 59 scientific papers (total in 59 papers)

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Metastable and bistable defects in silicon

B. N. Mukashev, Kh. A. Abdullin, Yu. V. Gorelkinskii

Institute of Physics and Technology, Ministry of Education and Science of the Republic of Kazakhstan

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DOI: https://doi.org/10.3367/UFNr.0170.200002b.0143

Abstract: Existing data on the properties and structure of metastable and bistable defects in silicon are analyzed. Primary radiation-induced defects (vacancies, self-interstitial atoms, and Frenkel pairs), complexes of oxygen, carbon, hydrogen, and other impurity atoms and defects with negative correlation energy are considered.

Received: July 23, 1999

English version:
Physics–Uspekhi, 2000, Volume 43, Issue 2, Pages 139–150
DOI: https://doi.org/10.1070/PU2000v043n02ABEH000649

Bibliographic databases:

Document Type: Article

PACS: 61.72.-y, 61.72.Tt, 61.80.-x, 71.55.-i

Language: Russian

Citation: B. N. Mukashev, Kh. A. Abdullin, Yu. V. Gorelkinskii, “Metastable and bistable defects in silicon”, UFN, 170:2 (2000), 143–155; Phys. Usp., 43:2 (2000), 139–150

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This publication is cited in the following 59 articles:

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