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This article is cited in 23 scientific papers (total in 23 papers)
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Quantum tunneling in multilayers and heterostructures with ferromagnetic semiconductors
A. S. Borukhovich Institute of Solid State Chemistry, Urals Branch of the Russian Academy of Sciences, Ekaterinburg
Abstract:
Experimental data promising exciting possibilities for quantum tunneling in multilayers and heterostructures with ferromagnetic semiconductors are comprehensively surveyed for the first time. The practical utilization of two- or singleparticle tunneling in such structures gives impetus to the tunneling spectroscopy of ferromagnetically ordered materials and, based on spin filtering, magnetic-field-shaped volt-ampere characteristics, and some other salient features of such structures, paves the way to a new generation of unconventional solid-state micromagnetoelectronic cryogenic devices, including those operated in millimeter or submillimeter wavelength ranges.
Received: September 3, 1998
Citation:
A. S. Borukhovich, “Quantum tunneling in multilayers and heterostructures with ferromagnetic semiconductors”, UFN, 169:7 (1999), 737–751; Phys. Usp., 42:7 (1999), 653–667
Linking options:
https://www.mathnet.ru/eng/ufn1630 https://www.mathnet.ru/eng/ufn/v169/i7/p737
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Abstract page: | 270 | Full-text PDF : | 71 | References: | 44 | First page: | 1 |
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