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Uspekhi Fizicheskikh Nauk, 1999, Volume 169, Number 7, Pages 737–751
DOI: https://doi.org/10.3367/UFNr.0169.199907b.0737
(Mi ufn1630)
 

This article is cited in 23 scientific papers (total in 23 papers)

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Quantum tunneling in multilayers and heterostructures with ferromagnetic semiconductors

A. S. Borukhovich

Institute of Solid State Chemistry, Urals Branch of the Russian Academy of Sciences, Ekaterinburg
References:
Abstract: Experimental data promising exciting possibilities for quantum tunneling in multilayers and heterostructures with ferromagnetic semiconductors are comprehensively surveyed for the first time. The practical utilization of two- or singleparticle tunneling in such structures gives impetus to the tunneling spectroscopy of ferromagnetically ordered materials and, based on spin filtering, magnetic-field-shaped volt-ampere characteristics, and some other salient features of such structures, paves the way to a new generation of unconventional solid-state micromagnetoelectronic cryogenic devices, including those operated in millimeter or submillimeter wavelength ranges.
Received: September 3, 1998
English version:
Physics–Uspekhi, 1999, Volume 42, Issue 7, Pages 653–667
DOI: https://doi.org/10.1070/PU1999v042n07ABEH000538
Bibliographic databases:
Document Type: Article
PACS: 73.40.-c, 74.50.+r, 74.80.-g, 75.50.Dd
Language: Russian


Citation: A. S. Borukhovich, “Quantum tunneling in multilayers and heterostructures with ferromagnetic semiconductors”, UFN, 169:7 (1999), 737–751; Phys. Usp., 42:7 (1999), 653–667
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  • This publication is cited in the following 23 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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