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Uspekhi Fizicheskikh Nauk, 1998, Volume 168, Number 8, Pages 817–842
DOI: https://doi.org/10.3367/UFNr.0168.199808a.0817
(Mi ufn1504)
 

This article is cited in 140 scientific papers (total in 140 papers)

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Thallium dopant in lead chalcogenides: investigation methods and peculiarities

S. A. Nemov, Yu. I. Ravich

Saint-Petersburg State Technical University
Abstract: The body of experimental and theoretical data on transport phenomena, optical absorption, low-temperature heat capacity, tunnelling spectroscopy, magnetic susceptibility, superconductivity, and self-compensation are summarized for thallium-doped lead chalcogenides PbM (M = Te, Se, S) and PbM-based solid solutions. The physical properties of the semiconducting compounds are explained in a unified manner using the concept of resonance Tl states located in the valence band of the compound. The basic parameters of resonance impurity states are estimated and their dependences on temperature, pressure, and material composition are determined.
Received: July 1, 1998
English version:
Physics–Uspekhi, 1998, Volume 41, Issue 8, Pages 735–759
DOI: https://doi.org/10.1070/PU1998v041n08ABEH000427
Bibliographic databases:
Document Type: Article
PACS: 71.20.-b, 71.55.-i, 74.70.-b, 78.90.+t
Language: Russian


Citation: S. A. Nemov, Yu. I. Ravich, “Thallium dopant in lead chalcogenides: investigation methods and peculiarities”, UFN, 168:8 (1998), 817–842; Phys. Usp., 41:8 (1998), 735–759
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