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Uspekhi Fizicheskikh Nauk, 1998, Volume 168, Number 7, Pages 804–808
DOI: https://doi.org/10.3367/UFNr.0168.199807h.0804
(Mi ufn1500)
 

This article is cited in 14 scientific papers (total in 14 papers)

CONFERENCES AND SYMPOSIA

Coulomb gap and metal–insulator transitions in doped semiconductors

A. G. Zabrodskii

Ioffe Institute, St. Petersburg
Received: June 1, 1998
English version:
Physics–Uspekhi, 1998, Volume 41, Issue 7, Pages 722–726
DOI: https://doi.org/10.1070/PU1998v041n07ABEH000422
Bibliographic databases:
Document Type: Article
PACS: 71.30.+h
Language: Russian


Citation: A. G. Zabrodskii, “Coulomb gap and metal–insulator transitions in doped semiconductors”, UFN, 168:7 (1998), 804–808; Phys. Usp., 41:7 (1998), 722–726
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    CONFERENCES AND SYMPOSIA
    This publication is cited in the following 14 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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