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Uspekhi Fizicheskikh Nauk, 2005, Volume 175, Number 2, Pages 139–161
DOI: https://doi.org/10.3367/UFNr.0175.200502b.0139 (Mi ufn146) 		 
This article is cited in 101 scientific papers (total in 101 papers)

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Metal–insulator transitions and the effects of electron–electron interactions in two-dimensional electron systems

A. A. Shashkin

Institute of Solid State Physics, Russian Academy of Sciences
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DOI: https://doi.org/10.3367/UFNr.0175.200502b.0139
Abstract: Experimental results on metal–insulator transitions and the anomalous properties of strongly interacting two-dimensional electron systems are reviewed and critically analyzed. Special attention is given to recent results on strongly enhanced spin susceptibility and effective mass in low-disordered silicon MOSFETs.
Received: June 16, 2004
Revised: October 18, 2004
English version:
Physics–Uspekhi, 2005, Volume 48, Issue 2, Pages 129–149
DOI: https://doi.org/10.1070/PU2005v048n02ABEH001944
Bibliographic databases:
Document Type: Article
PACS: 71.30.+h, 73.40.Qv, 73.43.-f
Language: Russian
Citation: A. A. Shashkin, “Metal–insulator transitions and the effects of electron–electron interactions in two-dimensional electron systems”, UFN, 175:2 (2005), 139–161; Phys. Usp., 48:2 (2005), 129–149
Citation in format AMSBIB
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\transl
\jour Phys. Usp.
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\pages 129--149
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  • https://www.mathnet.ru/eng/ufn/v175/i2/p139
    • This publication is cited in the following 101 articles:
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