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Uspekhi Fizicheskikh Nauk, 1998, Volume 168, Number 2, Pages 219–222
DOI: https://doi.org/10.3367/UFNr.0168.199802ac.0219
(Mi ufn1444)
 

CONFERENCES AND SYMPOSIA

Sensing of dynamic charge states using single-electron tunneling transistors

V. A. Krupenina, S. V. Lotkhova, H. Schererb, A. B. Zorinb, F.-J. Ahlersb, J. Niemeyerb, H. Wolfb

a M. V. Lomonosov Moscow State University
b Physikalisch-Technische Bundesanstalt
Received: December 31, 1998
English version:
Physics–Uspekhi, 1998, Volume 41, Issue 2, Pages 204–206
DOI: https://doi.org/10.1070/PU1998v041n02ABEH000365
Bibliographic databases:
Document Type: Article
PACS: 73.40.-c, 74.80.Fp
Language: Russian


Citation: V. A. Krupenin, S. V. Lotkhov, H. Scherer, A. B. Zorin, F.-J. Ahlers, J. Niemeyer, H. Wolf, “Sensing of dynamic charge states using single-electron tunneling transistors”, UFN, 168:2 (1998), 219–222; Phys. Usp., 41:2 (1998), 204–206
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